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    MICROMECHANICAL COMPONENT FOR A SENSOR AND/OR MICROPHONE DEVICE
    2.
    发明公开
    MICROMECHANICAL COMPONENT FOR A SENSOR AND/OR MICROPHONE DEVICE 审中-公开

    公开(公告)号：US20230416079A1

    公开(公告)日：2023-12-28

    申请号：US18337942

    申请日：2023-06-20

    Applicant: Robert Bosch GmbH

    Inventor： Heribert Weber ,  Peter Schmollngruber

    IPC: B81B7/02 ,  B81C1/00 ,  G01L1/22

    CPC classification number: B81B7/02 ,  B81C1/00166 ,  G01L1/2262 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/014

    Abstract: A micromechanical component for a sensor and/or microphone device. The component has an adjustable first actuator electrode suspended on a regionally deformable first layer, a first stator electrode fastened so that a first measuring signal is able to be tapped with regard to a first voltage or capacitance applied between the first actuator electrode and the first stator electrode, and a second actuator electrode, so that a second measuring signal is able to be tapped with regard to a second voltage or capacitance applied between the second actuator electrode and the first stator electrode or between the second actuator electrode and the second stator electrode. The second actuator electrode is situated in an adjustable manner on a side of the first actuator electrode facing away from the first layer in that the second actuator electrode is suspended on the first actuator electrode and/or an at least regionally deformable second layer.

    ACTUATOR LAYER PATTERNING WITH TOPOGRAPHY
    4.
    发明公开
    ACTUATOR LAYER PATTERNING WITH TOPOGRAPHY 审中-公开

    公开(公告)号：US20230202835A1

    公开(公告)日：2023-06-29

    申请号：US18115178

    申请日：2023-02-28

    Applicant: InvenSense, Inc.

    Inventor： Daesung Lee ,  Alan Cuthbertson

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00095 ,  B81B7/0006 ,  B81B2207/07 ,  B81B2207/012 ,  B81C2201/014 ,  B81C2201/0198 ,  B81C2203/036 ,  B81C2203/0792

    Abstract: A method including fusion bonding a handle wafer to a first side of a device wafer. The method further includes depositing a hardmask on a second side of the device wafer, wherein the second side is planar. An etch stop layer is deposited over the hardmask and an exposed portion of the second side of the device wafer. A dielectric layer is formed over the etch stop layer. A via is formed within the dielectric layer. The via is filled with conductive material. A eutectic bond layer is formed over the conductive material. Portions of the dielectric layer uncovered by the eutectic bond layer is etched to expose the etch stop layer. The exposed portions of the etch stop layer is etched. A micro-electro-mechanical system (MEMS) device pattern is etched into the device wafer.

    MICROELECTROMECHANICAL SYSTEMS (MEMS) STRUCTURE TO PREVENT STICTION AFTER A WET CLEANING PROCESS
    10.
    发明申请
    MICROELECTROMECHANICAL SYSTEMS (MEMS) STRUCTURE TO PREVENT STICTION AFTER A WET CLEANING PROCESS 有权
    微波电化学系统（MEMS）结构在清洁过程之后防止干扰

    公开(公告)号：US20160318753A1

    公开(公告)日：2016-11-03

    申请号：US14699070

    申请日：2015-04-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chung-Yen Chou

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/001 ,  B81B2203/0163 ,  B81B2207/012 ,  B81C1/00801 ,  B81C1/00952 ,  B81C2201/013 ,  B81C2201/014 ,  B81C2203/0792

    Abstract: A method for manufacturing a microelectromechanical systems (MEMS) structure with sacrificial supports to prevent stiction is provided. A first etch is performed into an upper surface of a carrier substrate to form a sacrificial support in a cavity. A thermal oxidation process is performed to oxidize the sacrificial support, and to form an oxide layer lining the upper surface and including the oxidized sacrificial support. A MEMS substrate is bonded to the carrier substrate over the carrier substrate and through the oxide layer. A second etch is performed into the MEMS substrate to form a movable mass overlying the cavity and supported by the oxidized sacrificial support. A third etch is performed into the oxide layer to laterally etch the oxidized sacrificial support and to remove the oxidized sacrificial support. A MEMS structure with anti-stiction bumps is also provided.

    Abstract translation: 提供了一种用于制造具有牺牲支撑以防止静摩擦的微机电系统（MEMS）结构的方法。 执行第一蚀刻到载体基板的上表面中以在空腔中形成牺牲支撑。 进行热氧化处理以氧化牺牲载体，并形成衬在上表面上并包括氧化牺牲载体的氧化物层。 MEMS衬底在载体衬底上并通过氧化物层结合到载体衬底。 执行第二蚀刻到MEMS衬底中以形成覆盖空腔并由氧化的牺牲支撑支撑的可移动质量。 执行第三蚀刻到氧化物层中以横向蚀刻氧化的牺牲载体并除去氧化的牺牲载体。 还提供了具有抗静电凸块的MEMS结构。

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