公开(公告)号：US06971835B2

公开(公告)日：2005-12-06

申请号：US10323676

申请日：2002-12-20

申请人： Masayuki Ishibashi ,  Takayuki Dohi

发明人： Masayuki Ishibashi ,  Takayuki Dohi

IPC分类号： C23C16/44 ,  C23C16/458 ,  C30B25/12 ,  B65C49/07

CPC分类号： C30B25/12 ,  C23C16/4412 ,  C23C16/4585

摘要： A single opening is formed in a central portion of a susceptor of a vapor phase epitaxial growth system. Consequently, any dopant diffused off outwardly from the back surface of a wafer during an epitaxial growth process can be exhausted through the opening to the beneath side with respect to the susceptor. As a result, it may become difficult for auto-doping to be induced, even with no protective film formed on a back surface of the wafer. Uniformity in a dopant concentration in the surface may be improved and thus a resistivity may be made uniform. Further, since a temperature of the back surface of the wafer is measured through the opening, a heating temperature can be controlled stably, thus allowing a precise temperature control thereof. Consequently, the epitaxial film as well as the distribution of its resistivity may be made uniform across the entire wafer.

摘要翻译： 在气相外延生长系统的基座的中心部分形成单个开口。 因此，在外延生长过程期间从晶片背表面向外扩散的任何掺杂物可以通过开口相对于基座被耗尽到下侧。 结果，即使没有在晶片的背面上形成保护膜，也可能难以引起自动掺杂。 可以提高表面中掺杂剂浓度的均匀性，从而可以使电阻率均匀。 此外，由于通过开口测量晶片的背面的温度，因此可以稳定地控制加热温度，从而允许其精确的温度控制。 因此，可以在整个晶片上使外延膜以及其电阻率的分布均匀。