公开(公告)号：US06258972B1

公开(公告)日：2001-07-10

申请号：US08691124

申请日：1996-08-01

申请人： Satoko Nakaoka ,  Masayuki Endo ,  Hiromi Ohsaki ,  Akiko Katsuyama

发明人： Satoko Nakaoka ,  Masayuki Endo ,  Hiromi Ohsaki ,  Akiko Katsuyama

IPC分类号： C07E708

CPC分类号： G03F7/0751

摘要： To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH3)3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH3)2CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.

摘要翻译： 向由硅制成的半导体衬底的表面提供异丙烯氧基三甲基硅烷作为表面处理剂，使半导体衬底的表面疏水化并增加对半导体衬底的粘合性。 因此，将Si（CH 3）3（三甲基甲硅烷基）取代为半导体衬底的表面上的OH基的氢原子，得到（CH 3）2 CO（丙酮）。 随后，通过使用所需的掩模将化学放大型抗蚀剂施加到半导体衬底的表面并暴露于光，然后依次由PEB和显影形成图案。 由于表面处理剂不产生氨，因此可以形成具有优异构型的图案，其上不形成不溶性表皮层。