公开(公告)号：US06472547B1

公开(公告)日：2002-10-29

申请号：US10080792

申请日：2002-02-20

申请人： Satoru Morisawa ,  Masamichi Matsumoto ,  Hidekimi Kadokura

发明人： Satoru Morisawa ,  Masamichi Matsumoto ,  Hidekimi Kadokura

IPC分类号： C07F994

CPC分类号： C07F9/94

摘要： This invention provides a process for producing bismuth tertiary amyloxide which is a starting material for forming a ferroelectric film such as SrBi2Ta2O9 containing bismuth oxide, or an oxide superconductive film such as Bi2Sr2CaCu2O8, by the CVD method or sol-gel method. This process comprises reacting bismuth bromide with sodium tertiary amyloxide or potassium tertiaryamyloxide in a toluene solvent containing 5 to 30 weight % tetrahydrofuran, then separating a byproduct sodium bromide or potassium bromide by filtration and recovering bismuth tertiary amyloxide by distillation under reduced pressure.

摘要翻译： 本发明提供了通过CVD法或溶胶 - 凝胶法制备作为形成含有氧化铋的SrBi 2 Ta 2 O 9等铁电体膜，Bi2Sr2CaCu2O8等氧化物超导膜的起始原料的铋叔淀粉的制造方法。 该方法包括使溴化铋与叔淀粉钠或叔胺氧化钾在含有5至30重量％四氢呋喃的甲苯溶剂中反应，然后通过过滤分离副产物溴化钠或溴化钾，并通过减压蒸馏回收铋叔淀粉。