公开(公告)号：US06387823B1

公开(公告)日：2002-05-14

申请号：US09577756

申请日：2000-05-23

申请人： Thomas Sonderman ,  Anthony J. Toprac

发明人： Thomas Sonderman ,  Anthony J. Toprac

IPC分类号： C13C1600

CPC分类号： H01L21/67253

摘要： A method for controlling a deposition process, includes providing a wafer in a chamber of a deposition tool, the deposition tool being adapted to operate in accordance with a recipe; providing reactant gases to the chamber, the reactant gases reacting to form a layer on the wafer; allowing exhaust gases to exit the chamber; measuring characteristics of exhaust gases; and changing the recipe based on the characteristics of the exhaust gases. A deposition tool includes a chamber, a gas supply line, a gas exhaust line, a gas analyzer, and a controller. The chamber is adapted to receive a wafer. The gas supply line is coupled to the chamber for providing reactive gases. The gas exhaust line is coupled to the chamber for receiving exhaust gases. The gas analyzer is coupled to the gas exhaust line and adapted to determine characteristics of the exhaust gases. The controller is adapted to control the processing of the wafer in the chamber based on the characteristics of the exhaust gases.

摘要翻译： 一种用于控制沉积过程的方法，包括在沉积工具的腔室中提供晶片，所述沉积工具适于根据配方进行操作; 向所述室提供反应气体，所述反应气体反应以在所述晶片上形成层; 允许废气离开室; 测量排气特性; 并根据废气特性改变配方。 沉积工具包括室，气体供应管线，排气管线，气体分析器和控制器。 腔室适于接收晶片。 气体供应管线连接到室以提供反应性气体。 排气管线连接到用于接收废气的室。 气体分析器耦合到排气管线并且适于确定废气的特性。 控制器适于基于排气的特性来控制室中的晶片的处理。