公开(公告)号：US5349873A

公开(公告)日：1994-09-27

申请号：US92480

申请日：1993-07-16

Applicant: Yoshiteru Omura ,  Kouji Tsukada ,  Yutaka Nonomura ,  Takeshi Morikawa

Inventor： Yoshiteru Omura ,  Kouji Tsukada ,  Yutaka Nonomura ,  Takeshi Morikawa

IPC: G01L1/16 ,  G01L1/18 ,  G01L9/00 ,  G01L9/06 ,  G01L9/08 ,  G01L23/10 ,  G01L23/22 ,  G01L9/04 ,  G01L1/75

CPC classification number: G01L9/0052 ,  G01L1/18 ,  G01L9/0058 ,  G01L9/065 ,  Y10S73/04

Abstract: A force transducer comprising: a silicon semiconductor having a crystal face of (110); a pair of input-output shared electrodes mounted on the crystal face of the silicon semiconductor in mutual confronting relationship in a direction of of the crystal or a direction equivalent to the direction of ; a force transmission block connected to the crystal face of the silicon semiconductor for transmitting a force W perpendicularly to the crystal face; and a support bed supporting the silicon semiconductor and connected to the silicon semiconductor at a face opposite to the crystal face to which the force transmission block is connected, whereby a voltage corresponding to the force W and to be measured is output from the input-output shared electrodes when the force W is applied perpendicularly to the crystal face of the silicon semiconductor via the force transmission block while a current flows in the silicon semiconductor via the input-output shared electrodes.

Abstract translation: 一种力传感器，包括：具有（110）的晶面的硅半导体; 在晶体的<110>方向或与<110>方向相等的方向上以相互面对的关系安装在硅半导体的晶面上的一对输入输出共享电极; 连接到所述硅半导体的所述晶面的力传递块，用于垂直于所述晶体面传递力W; 以及支撑硅半导体并且在与与所述力传递块连接的晶面相对的面处与所述硅半导体连接的支撑床，由此从所述输入输出输出与所述力W对应的电压 当电流经由输入 - 输出共享电极在硅半导体中流动时，通过力传递块垂直于硅半导体的晶面施加力W时的共用电极。