公开(公告)号：US06492075B1

公开(公告)日：2002-12-10

申请号：US09881993

申请日：2001-06-15

申请人： Michael K. Templeton ,  Ramkumar Subramanian ,  Bharath Rangarajan

发明人： Michael K. Templeton ,  Ramkumar Subramanian ,  Bharath Rangarajan

IPC分类号： G03H900

CPC分类号： G03F7/40 ,  G03F7/405

摘要： In one embodiment, the present invention relates to a method of treating a patterned resist involving the steps of providing the patterned resist having structural features of a first size, the patterned resist containing a polymer having a labile group; contacting a coating containing at least one cleaving compound with the patterned resist to form a thin deprotected resist layer at an interface between the patterned resist and the coating; and removing the coating and the thin deprotected resist layer leaving the patterned resist having structural features of a second size, wherein the second size is smaller than the first size.

摘要翻译： 在一个实施方案中，本发明涉及一种处理图案化抗蚀剂的方法，包括以下步骤：提供具有第一尺寸结构特征的图案化抗蚀剂，所述图案化抗蚀剂含有具有不稳定基团的聚合物; 使含有至少一种裂解化合物的涂层与图案化的抗蚀剂接触以在图案化的抗蚀剂和涂层之间的界面处形成薄的去保护的抗蚀剂层; 以及去除涂层和薄的去保护的抗蚀剂层，留下具有第二尺寸的结构特征的图案化抗蚀剂，其中第二尺寸小于第一尺寸。