公开(公告)号：US5814874A

公开(公告)日：1998-09-29

申请号：US680669

申请日：1996-07-16

申请人： Guenter Igel

发明人： Guenter Igel

IPC分类号： H01L21/329 ,  H01L29/47 ,  H01L29/872 ,  H01L21/075 ,  H01L29/812 ,  H01L31/07

CPC分类号： H01L29/66143 ,  H01L29/872

摘要： A semiconductor device having a semiconductor substrate and an epitaxial layer deposited thereon which supports a patterned insulating layer on which a metal layer is provided. To achieve a lower capacitance of the semiconductor device with unchanged forward voltage, the epitaxial layer consists of first and second epitaxial layers, the first epitaxial layer which adjoins the semiconductor substrate having a higher dopant concentration than and being of the same conductivity type as the second epitaxial layer.

摘要翻译： 一种具有半导体衬底和沉积在其上的外延层的半导体器件，其支撑设置有金属层的图案化绝缘层。 为了实现具有不变正向电压的半导体器件的较低电容，外延层由第一和第二外延层组成，第一外延层邻接半导体衬底，掺杂剂浓度高于第二外延层，并且与第二外延层具有相同的导电类型 外延层。