公开(公告)号：US06277755B1

公开(公告)日：2001-08-21

申请号：US09466686

申请日：1999-12-20

申请人： Shuenn-Jeng Chen ,  Chih-Ching Hsu

发明人： Shuenn-Jeng Chen ,  Chih-Ching Hsu

IPC分类号： H01L21303

CPC分类号： H01L21/76829 ,  H01L21/76807 ,  H01L21/76822

摘要： A method for fabricating an interconnect structure by a dual damascene process is described, in which a first low dielectric constant material is formed on a substrate, followed by forming a gradient silicon oxy-nitride layer on the first low dielectric constant. A second low dielectric constant layer is further formed on the gradient silicon oxy-nitride layer. A trench line is then formed in the second low dielectric constant material using the gradient silicon oxy-nitride layer as an etch-stop, followed by forming a via under the trench line.

摘要翻译： 描述了通过双镶嵌工艺制造互连结构的方法，其中在衬底上形成第一低介电常数材料，随后在第一低介电常数上形成梯度硅氮化物层。 在梯度硅氮化物层上进一步形成第二低介电常数层。 然后在第二低介电常数材料中使用梯度硅氧氮化物层作为蚀刻停止层形成沟槽线，随后在沟槽线下形成通孔。