公开(公告)号：US06274512B1

公开(公告)日：2001-08-14

申请号：US09658508

申请日：2000-09-08

申请人： Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Katsuya Okumura

发明人： Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Katsuya Okumura

IPC分类号： H01L213605

CPC分类号： H01L21/02043 ,  H01L21/28518

摘要： A method comprises the steps of forming a damaged layer on a silicon substrate by subjecting the silicon substrate to a plasma treatment, forming a silicon oxide layer by exposing the surface of the damaged layer to an oxygen plasma to oxidize the surface of the silicon substrate including the damaged layer and selectively eliminating the silicon oxide layer under a condition of a high selective ratio to the silicon, in which the film thickness of the silicon oxide layer is controlled by controlling an ion energy of the oxygen plasma and exposure time of the surface of the damaged layer to the oxygen plasma in accordance with the film thickness of the damaged layer.

摘要翻译： 一种方法包括以下步骤：通过对硅衬底进行等离子体处理，在硅衬底上形成损伤层，通过将损伤层的表面暴露于氧等离子体来氧化氧化硅层，以氧化硅衬底的表面，包括 损坏层，并且在与硅的选择率高的条件下选择性地除去氧化硅层，其中通过控制氧等离子体的离子能量和表面的暴露时间来控制氧化硅层的膜厚度 根据损伤层的膜厚度，氧等离子体的损伤层。