公开(公告)号：US06411023B1

公开(公告)日：2002-06-25

申请号：US09496643

申请日：2000-02-03

申请人： Katsuhito Ogura ,  Ryoichi Hirano ,  Toru Tojo

发明人： Katsuhito Ogura ,  Ryoichi Hirano ,  Toru Tojo

IPC分类号： H05H1900

CPC分类号： H01J37/18 ,  H01J2237/022

摘要： A vacuum processing apparatus performs processing such-as a pattern depiction with a charged beam within a process chamber evacuated to a high vacuum by an ion pump. The vacuum processing apparatus, which makes it possible to prevent the accuracy of the charged beam pattern depiction from being deteriorated by ions and electrons leaking from the ion pump, has a conductor and a voltage applying unit. The conductor is arranged in the vicinity of the suction port of the process chamber communicating with the ion pump such that the conductor is electrically insulated from the process chamber. The voltage applying unit imparts a potential differing from that of the process chamber to the conductor. Because of the potential difference between the conductor and the process chamber, the ions and electrons leaking from the ion pump are reflected or adsorbed by the conductor so as to suppress leakage of the ions and electrons into the process chamber.

摘要翻译： 真空处理装置通过离子泵在被抽成高真空的处理室内进行诸如利用带电束的图案描绘的处理。 能够防止带电波束图形的精度被从离子泵泄漏的离子和电子劣化的真空处理装置具有导体和电压施加单元。 导体布置在与离子泵连通的处理室的吸入口附近，使得导体与处理室电绝缘。 电压施加单元将不同于处理室的电位赋予导体。 由于导体和处理室之间的潜在差异，离子泵泄漏的离子和电子被导体反射或吸收，以便抑制离子和电子向处理室的泄漏。