公开(公告)号：WO1989005995A1

公开(公告)日：1989-06-29

申请号：PCT/US1988004591

申请日：1988-12-21

Applicant: SUBMICRON STRUCTURES, INC.

Inventor： SUBMICRON STRUCTURES, INC. ,  GILSON, Greyson

IPC: G03F07/20

CPC classification number: G03H1/16 ,  G03F7/70408 ,  G03H1/2286 ,  G03H2222/46 ,  G03H2222/54

Abstract: The exposure component (10) of a photo-etching system for a semiconductor wafer (28) includes a laser (12) that shines coherent light through an expansion lens (14) and then a contraction lens (16) to supply a spherically convergent beam of light through a lensless-Fourier-transform hologram (22) and onto the semiconductor wafer (28). The wafer (28) is located tangent to a hemisphere centered on the hologram (22) that has the focal point (26) of the convergent spherical beam at the middle of its curved surface. This forms a reduced version of the source image from which the hologram (22) was formed and achieves feature sizes significantly smaller than those attainable with conventional mask-type systems employing light of the same wavelength.