公开(公告)号：WO2023287700A1

公开(公告)日：2023-01-19

申请号：PCT/US2022/036670

申请日：2022-07-11

Applicant: APPLIED MATERIALS, INC.

Inventor： TOLLE, John Byron ,  KITAJIMA, Tomohiko ,  KIRSCHENHEITER, Thomas John ,  LIU, Patricia M. ,  ZHU, Zuoming ,  MARGETIS, Joe ,  FISHBURN, Fredrick David ,  MOHAMMED, Abdul Wahab ,  LEE, Gill Yong

IPC: H01L27/108

Abstract: Three-dimensional dynamic random-access memory (3D DRAM) structures and methods of formation of same are provided herein. In some embodiments, a 3D DRAM stack can include alternating silicon (Si) layers and silicon germanium (SiGe) layers. Each of the Si layers may have a height greater than a height of each of the SiGe layers. Methods and systems for formation of such structures are further provided.