公开(公告)号：WO2023287700A1

公开(公告)日：2023-01-19

申请号：PCT/US2022/036670

申请日：2022-07-11

Applicant: APPLIED MATERIALS, INC.

Inventor： TOLLE, John Byron ,  KITAJIMA, Tomohiko ,  KIRSCHENHEITER, Thomas John ,  LIU, Patricia M. ,  ZHU, Zuoming ,  MARGETIS, Joe ,  FISHBURN, Fredrick David ,  MOHAMMED, Abdul Wahab ,  LEE, Gill Yong

IPC: H01L27/108

Abstract: Three-dimensional dynamic random-access memory (3D DRAM) structures and methods of formation of same are provided herein. In some embodiments, a 3D DRAM stack can include alternating silicon (Si) layers and silicon germanium (SiGe) layers. Each of the Si layers may have a height greater than a height of each of the SiGe layers. Methods and systems for formation of such structures are further provided.

公开(公告)号：WO2022226236A1

公开(公告)日：2022-10-27

申请号：PCT/US2022/025831

申请日：2022-04-21

Applicant: APPLIED MATERIALS, INC.

Inventor： VARGHESE, Sony ,  FISHBURN, Fredrick David

IPC: H01L27/108 ,  H01L29/423

Abstract: Methods of forming a three-dimensional dynamic random-access memory (3D DRAM) structure are provided herein. In some embodiments, a method of forming a 3D DRAM structure includes forming at least one wordline feature in a first stack comprising a plurality of crystalline silicon (c-Si) layers alternating with a plurality of crystalline silicon germanium (c-SiGe) layers, wherein the wordline feature comprises: vertically etching a first pattern of holes; filling the first pattern of holes with a silicon germanium fill; vertically etching a plurality of isolation slots through the first stack; filling the plurality of isolation slots with a dielectric material to form an isolation layer between the silicon germanium fill; etching the silicon germanium fill and the plurality of c-SiGe layers to form a plurality of gate silicon channels comprising portions of the plurality of c-Si layers; and depositing a layer of conductive material that wraps around the plurality of gate silicon channels.

公开(公告)号：WO2022187126A1

公开(公告)日：2022-09-09

申请号：PCT/US2022/018110

申请日：2022-02-28

Applicant: APPLIED MATERIALS, INC.

Inventor： FISHBURN, Fredrick David ,  KUMAR, Arvind ,  VARGHESE, Sony ,  KANG, Chang Seok ,  KANG, Sung-Kwan ,  KITAJIMA, Tomohiko

IPC: H01L27/108

Abstract: Methods for forming three-dimensional dynamic random-access memory (3D DRAM) structures that leverage a grid pattern of high aspect ratio holes to form subsequent features of the 3D DRAM. The method may include depositing alternating layers of crystalline silicon (c-Si) and crystalline silicon germanium (c-SiGe) using an heteroepitaxy process onto a substrate and HAR etching of a pattern of holes into the substrate. The holes configured to provide chemistry access to laterally etch or deposit materials to form 3D DRAM features without requiring subsequent HAR etching of holes to form the 3D DRAM features.