公开(公告)号：WO2005026277A1

公开(公告)日：2005-03-24

申请号：PCT/US2004/029710

申请日：2004-09-10

Applicant: CABOT MICROELECTRONICS CORPORATION ,  SCHROEDER, David, J. ,  MOEGGENBORG, Kevin, J.

Inventor： SCHROEDER, David, J. ,  MOEGGENBORG, Kevin, J.

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5x10 -3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt.% of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5x10 -3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.

Abstract translation: 本发明提供一种化学机械抛光组合物，其包含：（a）二氧化硅颗粒，（b）约5×10 -3至约10毫摩尔/千克至少一种选自钙，锶，钡的碱土金属 ，及其混合物，基于抛光组合物的总重量，（c）约0.1至约15重量％的氧化剂，和（d）包含水的液体载体。 本发明还提供一种抛光组合物，其任选地包含氧化剂，其包含约5×10 -3至约10毫摩尔/千克至少一种选自钙，锶及其混合物的至少一种碱土金属。 本发明还提供了使用上述抛光组合物抛光衬底的方法。

公开(公告)号：WO2004033574A1

公开(公告)日：2004-04-22

申请号：PCT/IB2003/004296

申请日：2003-09-29

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： SCHROEDER, David, J. ,  MOEGGENBORG, Kevin, J. ,  CHOU, Homer ,  CHAMBERLAIN, Jeffrey, P. ,  HAWKINS, Joseph, D. ,  CARTER, Phillip, W.

IPC: C09G1/02

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: The invention provides methods of polishing a substrate comprising (i) contacting a substrate comprising at least one metal layer comprising copper with a chemical-mechanical polishing (CMP) system and (ii) abrading at least a portion of the metal layer comprising copper to polish the substrate. The CMP system comprises (a) an abrasive, (b) an amphiphilic nonionic surfactant, (c) a means for oxidizing the metal layer, (d) an organic acid, (e) a corrosion inhibitor, and (f) a liquid carrier. The invention further provides a two-step method of polishing a substrate comprising a first metal layer and a second, different metal layer. The first metal layer is polishing with a first CMP system comprising an abrasive and a liquid carrier, and the second metal layer is polished with a second CMP system comprising (a) an abrasive, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier.

Abstract translation: 本发明提供抛光衬底的方法，其包括（i）使包含铜的至少一个金属层与化学机械抛光（CMP）系统接触的衬底和（ii）研磨包含铜的至少一部分金属以抛光 底物。 CMP系统包括（a）研磨剂，（b）两亲性非离子表面活性剂，（c）氧化金属层的方法，（d）有机酸，（e）缓蚀剂，和（f）液体载体 。 本发明还提供一种抛光包括第一金属层和第二不同金属层的基板的两步法。 第一金属层用包括研磨剂和液体载体的第一CMP系统抛光，并且第二金属层用第二CMP系统抛光，所述第二CMP系统包括（a）研磨剂，（b）两亲性非离子表面活性剂，和（c） 液体载体。

公开(公告)号：WO2003050864A2

公开(公告)日：2003-06-19

申请号：PCT/US2002/041453

申请日：2002-12-03

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： SCHROEDER, David, J. ,  CARTER, Phillip ,  CHAMBERLAIN, Jeffrey, P. ,  MILLER, Kyle ,  CHERIAN, Isaac, K.

IPC: H01L21/321

CPC classification number: C23F3/06 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: The invention provides a method of polishing a substrate comprising a metal layer comprising copper. The method comprises the steps of (i) providing a chemical-mechanical polishing system comprising a liquid carrier, a polishing pad, an abrasive, and a negatively charged polymer or copolymer, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the substrate to polish the metal layer of the substrate. The negatively charged polymer or copolymer comprises one or more monomers selected from sulfonic acids, sulfonates, sulfates, phosphonic acids, phosphonates, and phosphates, has a molecular weight of 20,000 g/mol or more, and coats at least a portion of the abrasive such that the abrasive has a zeta potential value that is lowered upon interaction of the negatively charged polymer or copolymer with the abrasive.

Abstract translation: 本发明提供一种抛光包含含铜金属层的基材的方法。 该方法包括以下步骤：（i）提供包含液体载体，抛光垫，研磨剂和带负电的聚合物或共聚物的化学机械抛光系统，（ii）使基材与抛光系统接触，以及（iii） ）研磨至少一部分基板以抛光基板的金属层。 带负电荷的聚合物或共聚物包含选自磺酸，磺酸盐，硫酸盐，膦酸，膦酸盐和磷酸盐中的一种或多种单体，其分子量为20,000g / mol或更高，并且将至少一部分磨料 研磨剂的ζ电位值在负电荷聚合物或共聚物与研磨剂相互作用时降低。

公开(公告)号：WO2002061008A2

公开(公告)日：2002-08-08

申请号：PCT/US2002/005005

申请日：2002-01-14

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： CARTER, Phillip ,  BOGUSH, Gregory, H. ,  DE REGE THESAURO, Francesco ,  SCHROEDER, David, J. ,  CHAMBERLAIN, Jeffrey, P. ,  MUELLER, Brian, L.

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C09K3/1472

Abstract: The invention provides a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, wherein the total ion concentration of the system is above the critical coagulation concentration. The invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a the aforementioned polishing system or a polishing system comprising (a) a liquid carrier, (b) an alkali metal ion, (c) a compound comprising an amine group and at least one polar moiety, wherein the polar moiety contains at least one oxygen atom, and (d) a polishing pad and/or an abrasive, and polishing at least a portion of the substrate therewith in about 6 hours or less after the polishing system is prepared.

Abstract translation: 本发明提供一种抛光系统，其包括（a）液体载体，（b）碱金属离子，（c）包含胺基和至少一个极性部分的化合物，其中所述极性部分含有至少一个氧原子，和 （d）抛光垫和/或研磨剂，其中系统的总离子浓度高于临界凝结浓度。 本发明还提供了一种平面化或抛光复合衬底的方法，包括使衬底与上述抛光系统或抛光系统接触，所述抛光系统或抛光系统包括（a）液体载体，（b）碱金属离子，（c） 胺基团和至少一个极性部分，其中极性部分含有至少一个氧原子，和（d）抛光垫和/或研磨剂，并且在约6小时或更少的时间内在约6小时或更少的时间内研磨基材的至少一部分 准备抛光系统。