公开(公告)号：WO2023069187A1

公开(公告)日：2023-04-27

申请号：PCT/US2022/041151

申请日：2022-08-23

Applicant: APPLIED MATERIALS, INC.

Inventor： SAMPATH KUMAR, Pradeep ,  TAM, Norman L. ,  IU, Dongming ,  SHARMA, Shashank ,  RIESKE, Eric R. ,  KAMP, Michael P.

IPC: H01L21/321 ,  H01L21/67

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after exposing the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

公开(公告)号：WO2023014565A1

公开(公告)日：2023-02-09

申请号：PCT/US2022/038623

申请日：2022-07-28

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： HUANG, Ting-Kai ,  HU, Bin ,  LIANG, Yannan ,  PIAO, Hong

IPC: C09G1/04 ,  H01L21/321 ,  B24B37/04

Abstract: This disclosure relates to a composition that includes at least one first ruthenium removal rate enhancer; at least one copper removal rate inhibitor; at least one low-k removal rate inhibitor; and an aqueous solvent.

公开(公告)号：WO2022111210A1

公开(公告)日：2022-06-02

申请号：PCT/CN2021/127543

申请日：2021-10-29

Applicant: ACM RESEARCH (SHANGHAI) , INC.

Inventor： JIA, Zhaowei ,  WANG, Jian ,  WANG, Hui ,  YANG, Hongchao

IPC: H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  C25D7/12 ,  C25D5/48

Abstract: The present invention discloses a plating apparatus. The plating apparatus comprises a multiple electrodes. The multiple electrodes include a main electrode and at least two second electrodes. The main electrode and the at least two second electrodes respectively generate an electric field in a corresponding area on the surface of a wafer. The main electrode and the at least two second electrodes respectively have a control interface. By selecting the combination of the control relationship between each second electrode and the main electrode, the wafers with different sizes or different notch shapes are plated, and the control relationship is independent control or joint control. The plating apparatus of the present invention can plate wafers with different sizes or different notch shapes without replacing the whole plating chamber.

公开(公告)号：WO2022039978A1

公开(公告)日：2022-02-24

申请号：PCT/US2021/045406

申请日：2021-08-10

Applicant: APPLIED MATERIALS, INC.

Inventor： ZHANG, Xinming ,  SHARMA, Shashank ,  MAYUR, Abhilash, J. ,  TAM, Norman, L. ,  SPULLER, Matthew

IPC: H01L21/321 ,  H01L21/285 ,  H01L49/02 ,  H01L27/108

Abstract: Embodiments herein are directed to methods of forming titanium nitride films suitable for use as a bulk fill material for conductive features in a semiconductor device, such as for capacitor electrodes and/or buried word lines in a dynamic random-access memory (DRAM) device. In one embodiment, a method of forming conductive features in a semiconductor device is provided. The method includes thermally treating a substrate surface comprising at least portions of a titanium nitride layer in the presence of hydrogen radicals. Thermally treating the substrate includes positioning the substrate in a processing volume of a processing chamber, heating the substrate to a treatment temperature of more than about 250 °C, generating the hydrogen radicals using a remote plasma source fluidly coupled to the processing volume, and maintaining the substrate at the treatment temperature while concurrently exposing the at least portions of the titanium nitride layer to the generated hydrogen radicals. Here, the substrate includes a field surface having a plurality of openings formed therein and the at least portions of the titanium nitride layer are disposed in the plurality of openings.

公开(公告)号：WO2021067151A1

公开(公告)日：2021-04-08

申请号：PCT/US2020/053000

申请日：2020-09-28

Applicant: VERSUM MATERIALS US, LLC

Inventor： LI, Keh-Yeuan ,  TSAI, Ming Shih ,  SHI, Xiaobo ,  YANG, Rung-Je ,  HUANG, Chen Yuan ,  MATZ, Laura M.

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768 ,  B24B37/04

Abstract: Copper chemical mechanical planarization (CMP) polishing formulation, method and system are disclosed. The CMP polishing formulation comprises abrasive particles of specific morphology and mean particle sizes (≤ 100 nm, ≤ 50 nm, ≤ 40 nm, ≤ 30 nm, or ≤ 20nm), at least two or more amino acids, oxidizer, corrosion inhibitor, and water.

公开(公告)号：WO2021048507A1

公开(公告)日：2021-03-18

申请号：PCT/FR2020/051573

申请日：2020-09-11

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： DELCHEVALRIE, Julien ,  ARNAULT, Jean-Charles ,  SAADA, Samuel ,  BACHELET, Romain

IPC: H01L21/30 ,  C23C14/58 ,  H01L21/321 ,  H01L21/768 ,  H01L21/02 ,  H01L21/28

Abstract: L'invention concerne un procédé de traitement d'un film mince en un matériau conducteur ou semi-conducteur pour en améliorer la qualité cristalline. Il comprend : - la fourniture d'un substrat comportant, sur l'une de ses faces, un film mince dudit matériau; et - le traitement sous plasma polarisé de l'ensemble formé par le substrat et le film mince à une température et pendant une durée déterminées, de manière à obtenir une réorganisation cristalline sur une profondeur du film mince, le traitement sous plasma polarisé comprenant une polarisation électrique du film mince et une exposition du film ainsi polarisé à un plasma d'hydrogène, le traitement sous plasma polarisé étant réalisé à une température qui est inférieure aux températures de fusion du film mince et du substrat.

公开(公告)号：WO2020163200A1

公开(公告)日：2020-08-13

申请号：PCT/US2020/016327

申请日：2020-02-03

Applicant: APPLIED MATERIALS, INC.

Inventor： SHAVIV, Roey ,  GELATOS, Avgerinos V. ,  EMESH, Ismail ,  WANG, Xikun ,  LEI, Yu

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/285 ,  H01L21/67 ,  C23C16/04 ,  C23C16/06 ,  C23C16/56

Abstract: Methods and apparatus for filling a feature disposed in a substrate, including: depositing a first metal within the feature to a first predetermined thickness in a first process chamber; etching the first metal to remove a first portion of the metal at a top of the feature in a second process chamber different than the first process chamber to form an exposed surface of the first metal, and selectively depositing a second metal atop the exposed surface of the first metal within the feature to a second predetermined thickness in a third process chamber; wherein etching the first metal and selectively depositing a second metal are performed without oxygen contacting the top surface.

公开(公告)号：WO2020144438A1

公开(公告)日：2020-07-16

申请号：PCT/FR2020/050028

申请日：2020-01-08

Applicant: SOITEC

Inventor： BROEKAART, Marcel ,  PARISSI, Damien

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/321

Abstract: La présente invention se rapporte à procédé de fabrication d'un substrat receveur (30) pour une structure de type semi-conducteur sur isolant pour applications radiofréquence, comprenant les étapes suivantes : - fourniture d'un substrat semi-conducteur comprenant un substrat de base (1) en matériau monocristallin et une couche de piégeage de charges (2) en silicium polycristallin agencée sur le substrat de base (1), - oxydation de la couche de piégeage de charges (2) pour former une couche d'oxyde (3) agencée sur ladite couche de piégeage de charges, le procédé étant principalement caractérisé en ce que l'oxydation de la couche de piégeage de charges (2) est réalisée au moins en partie à une température inférieure ou égale à 875°C,de la manière suivante : - démarrage de l'oxydation à une première température (T 1 ) comprise entre 750°C et 1000°C, - diminution de la température jusqu'à une deuxième température (T 2 ), inférieure à la première température (T i ), comprise entre 750°C et 875°C, - poursuite de l'oxydation à la deuxième température (T 2 ).

公开(公告)号：WO2020117685A1

公开(公告)日：2020-06-11

申请号：PCT/US2019/064027

申请日：2019-12-02

Applicant: APPLIED MATERIALS, INC.

Inventor： VELAZQUEZ, Edwin ,  RANGARAJAN, Jagan

IPC: H01L21/67 ,  H01L21/321

Abstract: A method and apparatus for Marangoni substrate drying is disclosed which includes an adjustable spray bar assembly having mounting brackets coupled to a support structure of a drying system, a base assembly coupled to the mounting brackets and disposed parallel to a face of the support structure, and a mounting assembly coupled to and parallel with the base assembly. The mounting assembly is adjustable in a vertical direction at two distal ends. The mounting assembly includes arms onto which one or more spray bars may be disposed. While secured to the mounting assembly, the one or more spray bars may be rotated about a longitudinal axis.

公开(公告)号：WO2020078729A1

公开(公告)日：2020-04-23

申请号：PCT/EP2019/076795

申请日：2019-10-03

Applicant: ASML NETHERLANDS B.V.

Inventor： ZHANG, Huaichen ,  VAN LARE, Marie-Claire

IPC: H01L21/306 ,  H01L21/321 ,  B24B37/00 ,  B24B49/00 ,  B24B49/04 ,  B24B49/12 ,  B24B49/16 ,  H01L21/66

Abstract: Described herein is a method for facilitating chemical mechanical polishing. The method comprises determining contact mechanics information indicative of contact pressures and friction forces between a wafer and a pad during the chemical mechanical polishing at a plurality of locations across the wafer. The contact pressures and friction forces are asymmetrically distributed across the wafer. The method also includes determining a post chemical mechanical polishing surface topography of the wafer based at least on the contact mechanics information.