公开(公告)号：WO2022144387A1

公开(公告)日：2022-07-07

申请号：PCT/EP2021/087786

申请日：2021-12-29

Applicant: GLOBALWAFERS CO., LTD.

Inventor： PANNOCCHIA, Matteo ,  MARCHESE, Francesca ,  HO WAI KITT, James

IPC: C30B15/00 ,  C30B15/02 ,  C30B29/06

Abstract: Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz ) are disclosed. A batch of buffer members (e. g., quartz cullets ) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.

公开(公告)号：WO2022258634A1

公开(公告)日：2022-12-15

申请号：PCT/EP2022/065434

申请日：2022-06-07

Applicant: GLOBALWAFERS CO., LTD.

Inventor： PANNOCCHIA, Matteo ,  MARCHESE, Francesca ,  TOSI, Paolo

IPC: C30B15/00 ,  C30B15/12 ,  C30B15/02 ,  C30B29/06

Abstract: Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz ) are disclosed. One or more plates are added to the outer melt zone of a crucible assembly such that the plates are disposed on the initial charge of solid-state silicon. The silicon is melted and the plates float on the silicon melt. When silicon is added to the outer melt zone to replenish the melt during ingot growth, the silicon contacts the plates rather than falling directly into the melt in the outer melt zone. The silicon melts and falls through openings that extend through the thickness of the plates.