公开(公告)号：WO2020214732A1

公开(公告)日：2020-10-22

申请号：PCT/US2020/028360

申请日：2020-04-15

Applicant: LAM RESEARCH CORPORATION

Inventor： NANNAPANENI, Pragna ,  ERMEZ, Sema ,  TJOKRO, Novy ,  DENG, Ruopeng ,  YU, Tianhua ,  BA, Xiaolan ,  GAO, Juwen ,  GOPINATH, Sanjay

IPC: H01L21/285 ,  H01L21/768 ,  H01L27/108 ,  C23C16/04 ,  C23C16/06 ,  H01L27/11556 ,  H01L27/11582 ,  C23C16/455

Abstract: Provided herein are methods and related apparatus for purging processing chambers during an atomic layer deposition (ALD) process. The methods involve flowing purging gas from one or more accumulators to remove process gases from the processing chambers. Following the flowing of purging gas, additional reactants may be introduced into the processing chamber to continue an ALD cycle.

公开(公告)号：WO2021042114A1

公开(公告)日：2021-03-04

申请号：PCT/US2020/070434

申请日：2020-08-19

Applicant: LAM RESEARCH CORPORATION

Inventor： VELLANKI, Ravi ,  LENZ, Eric H. ,  GULABAL, Vinayakaraddy ,  GOPINATH, Sanjay ,  DANEK, Michal ,  MAJUMDER, Prodyut ,  TJOKRO, Novy ,  CHEN, Yen-Chang ,  THOMBARE, Shruti Vivek ,  BUTAIL, Gorun ,  VAN CLEEMPUT, Patrick A.

IPC: C23C16/455

Abstract: Various showerheads and methods are provided. A showerhead may include a faceplate partially defined by a front surface and a back surface, a back plate having a gas inlet, a first conical frustum surface, and a second conical frustum surface, a plenum volume fluidically connected to the gas inlet and at least partially defined by the gas inlet, the back surface of the faceplate, the first conical frustum surface, and the second conical frustum surface, and a baffle plate positioned within the plenum volume, and having a plurality of baffle plate through-holes extending through the baffle plate. The second conical frustum surface may be positioned radially outwards from the first conical frustum surface with respect to a center axis of the showerhead, and the second conical frustum surface may be positioned along the center axis farther from the gas inlet than the first conical frustum surface.

公开(公告)号：WO2021030836A1

公开(公告)日：2021-02-18

申请号：PCT/US2020/070394

申请日：2020-08-10

Applicant: LAM RESEARCH CORPORATION

Inventor： NANNAPANENI, Pragna ,  TJOKRO, Novy ,  ERMEZ, Sema ,  DENG, Ruopeng ,  YU, Tianhua ,  BA, Xiaolan ,  GOPINATH, Sanjay

IPC: H01L21/768 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/285 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06

Abstract: Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.

公开(公告)号：WO2018165296A1

公开(公告)日：2018-09-13

申请号：PCT/US2018/021338

申请日：2018-03-07

Applicant: LAM RESEARCH CORPORATION

Inventor： TAN, Samantha ,  VOLOSSKIY, Boris ,  KIM, Taeseung ,  NALLA, Praveen ,  TJOKRO, Novy ,  KOLICS, Artur

IPC: H01L21/768 ,  H01L21/02

Abstract: A method of depositing a metal seed for performing bottom-up gapfill of features of a substrate includes providing a substrate including a plurality of features; flowing a dilute metal precursor solution into the features, wherein the dilute metal precursor solution includes a metal precursor and a dilution liquid; evaporating the dilution liquid to locate the metal precursor at bottoms of the plurality of features; exposing the substrate to a plasma treatment to reduce the metal precursor to at least one of a metal or a metal alloy and to form a seed layer; performing a heat treatment on the substrate; and using a selective gapfill process to fill the features with a transition metal in contact with the seed layer.