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    PERFORMANCE PREDICTORS FOR SEMICONDUCTOR-MANUFACTURING PROCESSES
    5.
    发明申请
    PERFORMANCE PREDICTORS FOR SEMICONDUCTOR-MANUFACTURING PROCESSES 审中-公开

    公开(公告)号：WO2021154747A1

    公开(公告)日：2021-08-05

    申请号：PCT/US2021/015121

    申请日：2021-01-26

    Applicant: LAM RESEARCH CORPORATION

    Inventor： SAWLANI, Kapil Umesh ,  DANEK, Michal ,  VELLANKI, Ravi ,  GOPINATH, Sanjay ,  COHEN, David G. ,  ROHAM, Sassan ,  SRIRAMAN, Saravanapriyan ,  HASKELL, Benjamin Allen ,  BROGAN, Lee J.

    IPC: H01L21/66 ,  G05B15/02 ,  G05B17/02 ,  G06N20/00

    Abstract: Methods, systems, and computer programs are presented for predicting the performance of semiconductor manufacturing equipment operations. One method includes an operation for obtaining machine-learning (ML) models, each model related to predicting a performance metric for an operation of a semiconductor manufacturing tool. Further, each ML model utilizes features defining inputs for the ML model. The method further includes an operation for receiving a process definition for manufacturing a product with the semiconductor manufacturing tool. One or more ML models are utilized to estimate a performance of the process definition used in the semiconductor manufacturing tool. Additionally, the method includes presenting, on a display, results showing the estimate of the performance of the manufacturing of the product. In some aspects, the use of hybrid models improves the predictive accuracy of the system by augmenting the capabilities of data-driven models with the reinforcement provided by the physics-based models.

    METAL DEPOSITION
    6.
    发明申请
    METAL DEPOSITION 审中-公开

    公开(公告)号：WO2021042114A1

    公开(公告)日：2021-03-04

    申请号：PCT/US2020/070434

    申请日：2020-08-19

    Applicant: LAM RESEARCH CORPORATION

    Inventor： VELLANKI, Ravi ,  LENZ, Eric H. ,  GULABAL, Vinayakaraddy ,  GOPINATH, Sanjay ,  DANEK, Michal ,  MAJUMDER, Prodyut ,  TJOKRO, Novy ,  CHEN, Yen-Chang ,  THOMBARE, Shruti Vivek ,  BUTAIL, Gorun ,  VAN CLEEMPUT, Patrick A.

    IPC: C23C16/455

    Abstract: Various showerheads and methods are provided. A showerhead may include a faceplate partially defined by a front surface and a back surface, a back plate having a gas inlet, a first conical frustum surface, and a second conical frustum surface, a plenum volume fluidically connected to the gas inlet and at least partially defined by the gas inlet, the back surface of the faceplate, the first conical frustum surface, and the second conical frustum surface, and a baffle plate positioned within the plenum volume, and having a plurality of baffle plate through-holes extending through the baffle plate. The second conical frustum surface may be positioned radially outwards from the first conical frustum surface with respect to a center axis of the showerhead, and the second conical frustum surface may be positioned along the center axis farther from the gas inlet than the first conical frustum surface.

    NUCLEATION-FREE TUNGSTEN DEPOSITION
    8.
    发明申请
    NUCLEATION-FREE TUNGSTEN DEPOSITION 审中-公开

    公开(公告)号：WO2020236749A1

    公开(公告)日：2020-11-26

    申请号：PCT/US2020/033461

    申请日：2020-05-18

    Applicant: LAM RESEARCH CORPORATION

    Inventor： ERMEZ, Sema ,  DENG, Ruopeng ,  NISHIOKA, Yutaka ,  BA, Xiaolan ,  GOPINATH, Sanjay ,  DANEK, Michal

    IPC: H01L21/285 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455

    Abstract: Provided herein are methods of depositing tungsten (W) films without depositing a nucleation layer. In certain embodiments, the methods involve depositing a conformal reducing agent layer of boron (B) and/or silicon (Si) on a substrate. The substrate generally includes a feature to be filled with tungsten with the reducing agent layer conformal to the topography of the substrate including the feature. The reducing agent layer is then exposed to a fluorine-containing tungsten precursor, which is reduced by the reducing agent layer to form a layer of elemental tungsten. The conformal reducing agent layer is converted to a conformal tungsten layer.

    METAL FILL PROCESS FOR THREE-DIMENSIONAL VERTICAL NAND WORDLINE
    9.
    发明申请
    METAL FILL PROCESS FOR THREE-DIMENSIONAL VERTICAL NAND WORDLINE 审中-公开

    公开(公告)号：WO2019036292A1

    公开(公告)日：2019-02-21

    申请号：PCT/US2018/046232

    申请日：2018-08-10

    Applicant: LAM RESEARCH CORPORATION

    Inventor： SCHLOSS, Lawrence ,  HUMAYUN, Raashina ,  GOPINATH, Sanjay ,  GAO, Juwen ,  DANEK, Michal ,  ASHTIANI, Kaihan Abidi

    IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L27/11524 ,  H01L27/11529

    Abstract: Disclosed are methods of depositing a transition metal such as tungsten on a semiconductor substrate. The method includes providing a gas mixture of diborane with a balance of hydrogen, where the hydrogen serves to stabilize the diborane in the gas mixture. The method further includes delivering the gas mixture to the semiconductor substrate to form a boron layer, where the boron layer serves as a reducing agent layer to convert a metal-containing precursor to metal, such as a tungsten-containing precursor to tungsten. In some implementations, the semiconductor substrate includes a vertical structure, such as a three-dimensional vertical NAND structure, with horizontal features or wordlines having openings in sidewalls of the vertical structure, where the boron layer may be conformally deposited in the horizontal features of the vertical structure.

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