A MAGNETORESISTANCE SENSOR
    1.
    发明申请
    A MAGNETORESISTANCE SENSOR 审中-公开
    磁阻传感器

    公开(公告)号:WO2018067070A1

    公开(公告)日:2018-04-12

    申请号:PCT/SG2017/050499

    申请日:2017-10-04

    Abstract: A magnetoresistance sensor There is provided a magnetoresistance sensor comprising a graphene-black phosphorus hybrid structure, wherein the graphene-black phosphorus hybrid structure comprises a black phosphorus layer and a graphene layer disposed on the black phosphorus layer. In particular, the magnetoresistance of the graphene-black phosphorus hybrid structure may be determined by a difference in a charge mobility and/or carrier density between the graphene layer and the black phosphorus layer, wherein the charge mobility and/or the carrier density of the graphene layer may be tunable by a gate voltage applied to the graphene-black phosphorus hybrid structure.

    Abstract translation: 一种磁阻传感器提供一种包括石墨烯 - 黑磷杂化结构的磁阻传感器,其中所述石墨烯 - 黑磷杂化结构包括黑磷层和设置在所述黑磷层上的石墨烯层。 特别地,石墨烯 - 黑色磷杂化结构的磁阻可以通过石墨烯层和黑色磷层之间的电荷迁移率和/或载流子密度的差异来确定,其中电荷迁移率和/或 石墨烯层可以通过施加于石墨烯 - 黑色磷杂化结构的栅极电压来调谐。

Patent Agency Ranking