公开(公告)号：WO2012064285A1

公开(公告)日：2012-05-18

申请号：PCT/SG2011/000399

申请日：2011-11-10

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  ÖZYILMAZ, Barbaros ,  NI, Guang-Xin ,  ZHENG, Yi

Inventor： ÖZYILMAZ, Barbaros ,  NI, Guang-Xin ,  ZHENG, Yi

IPC: B32B9/04 ,  H01B1/00

CPC classification number: H01B1/04 ,  C01B32/182 ,  C01B2204/00 ,  H01B13/0033 ,  H01L51/442 ,  H01L51/5206 ,  H01L51/5215 ,  Y02E10/549 ,  Y10T428/2911 ,  Y10T428/30

Abstract: A transparent conductor comprising: a graphene layer and a permanent dipole layer on the graphene layer configured to electrostatically dope the graphene layer.

Abstract translation: 一种透明导体，包括：石墨烯层和石墨烯层上的永久偶极子层，被配置为静电掺杂石墨烯层。

公开(公告)号：WO2013184072A1

公开(公告)日：2013-12-12

申请号：PCT/SG2013/000237

申请日：2013-06-06

Applicant: NATIONAL UNIVERSITY OF SINGAPORE

Inventor： ÖZYILMAZ, Barbaros ,  NI, Guang Xin ,  ZHENG, Yi

IPC: H01S5/06 ,  H01S3/127 ,  H01L51/00 ,  H01L33/00 ,  H01L27/15 ,  H01G9/20

CPC classification number: H01S3/1115 ,  C23C16/01 ,  C23C16/04 ,  C23C16/26 ,  C23C16/44 ,  G02F1/3523 ,  H01S3/067 ,  H01S3/06791 ,  H01S3/094046

Abstract: The invention relates to a novel type of gate-tunable photonics and plasmonics which utilizes doped large-scale graphene coupled with ferroelectric material. The graphene-ferroelectric hybrid structure paves the way for the realization of ultrafast, low power consumption and multi-wavelength operation saturable absorbers for applications in ultra-fast laser systems and novel types of plasmonics for applications in infrared detection, single-photon quantum devices and ultrasensitive detectors.

Abstract translation: 本发明涉及一种新型的栅极可调谐光子学和等离子体激元，其利用与铁电材料耦合的掺杂大规模石墨烯。 石墨烯 - 铁电混合结构为实现超快，低功耗和多波长工作的可饱和吸收材料铺平了道路，适用于超快激光系统和新型等离子体激元，用于红外检测，单光子量子器件和 超灵敏检测器

公开(公告)号：WO2010036210A8

公开(公告)日：2010-04-01

申请号：PCT/SG2009/000352

申请日：2009-09-23

Applicant: NATIONAL UNIVERSITY OF SINGAPORE ,  OEZYILMAZ, Barbaros ,  ZHENG, Yi ,  NI, Guang, Xin ,  TOH, Chee, Tat

Inventor： OEZYILMAZ, Barbaros ,  ZHENG, Yi ,  NI, Guang, Xin ,  TOH, Chee, Tat

IPC: H01L21/8236 ,  G11C14/00 ,  G11C15/04

Abstract: The disclosed memory cell (10) comprises a graphene layer (16) having controllable resistance states representing data values of the memory cell (10) In one exemplary embodiment a non- volatile memory is provided by having a ferroelectric layer (18) control the resistance states. In the exemplary embodiment, binary '0's and '1's are respectively represented by low and high resistance states of the graphene layer (16), and these states are switched in a non-volatile manner by the polarization directions of the ferroelectric layer (18).