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    CHEMICAL VAPOUR DEPOSITION FROM A RADIATION-SENSITIVE PRECURSOR
    5.
    发明申请
    CHEMICAL VAPOUR DEPOSITION FROM A RADIATION-SENSITIVE PRECURSOR 审中-公开
    化学气相沉积辐射敏感前体

    公开(公告)号：WO2017153510A1

    公开(公告)日：2017-09-14

    申请号：PCT/EP2017/055523

    申请日：2017-03-09

    申请人： DANMARKS TEKNISKE UNIVERSITET

    发明人： STOOT, Adam Carsten ,  CAMILLI, Luca

    IPC分类号： C23C16/26 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48

    CPC分类号： C23C16/482 ,  C23C16/26 ,  C23C16/342 ,  C23C16/4401 ,  C23C16/45557 ,  C23C16/481

    摘要： The present invention relates in one aspect to a method of depositing a thin film on a substrate by chemical vapour deposition (CVD) from a radiation-sensitive precursor substance. The method comprises the steps of: (i) placing the substrate in a reaction chamber of a CVD system; (ii) heating the substrate, wherein heating includes the transmission of electromagnetic heating radiation from a controllable radiative heat source through the reaction chamber towards the substrate, wherein the radiative heat source is controlled to provide electromagnetic radiation as one or more heating pulses, each heating pulse followed by an idle period; (iii) during at least one of the idle periods, providing a pressure pulse of precursor substance inside the reaction chamber by feeding at least one precursor substance to the reaction chamber so as to establish a reaction partial pressure for thin film deposition from said pre-cursor substance onto the substrate and subsequently, after a dwell time, removing the precursor substance so as to reduce the partial pressure of the precursor substance in the reaction chamber to below a threshold; and (iv) repeating steps (ii) and (iii) until a desired thin film is formed. According to a further aspect, the invention relates to a chemical vapour deposition (CVD) system for depositing a thin film onto a substrate using precursor substances containing at least one radiation sensitive species.

    摘要翻译： 本发明一方面涉及一种通过来自辐射敏感前体物质的化学气相沉积（CVD）在衬底上沉积薄膜的方法。 该方法包括以下步骤：（i）将衬底放置在CVD系统的反应室中; （ii）加热衬底，其中加热包括将来自可控辐射热源的电磁加热辐射通过反应室朝衬底传输，其中辐射热源被控制以提供电磁辐射作为一个或多个加热脉冲，每个加热 脉冲后跟一个空闲周期; （iii）在至少一个空闲期间，通过将至少一种前体物质加入到反应室中以在反应室内提供前体物质的压力脉冲，从而建立反应分压， 光标物质到达基板上，随后，在停留时间之后，移除前体物质以将反应室中前体物质的分压降低到阈值以下; 和（iv）重复步骤（ii）和（iii），直到形成所需的薄膜。 根据另一方面，本发明涉及用于使用包含至少一种辐射敏感物质的前体物质将薄膜沉积到基底上的化学气相沉积（CVD）系统。

    METHOD FOR PRODUCING A GRAPHENE FILM
    8.
    发明申请
    METHOD FOR PRODUCING A GRAPHENE FILM 审中-公开
    生产石棉膜的方法

    公开(公告)号：WO2017106035A1

    公开(公告)日：2017-06-22

    申请号：PCT/US2016/065798

    申请日：2016-12-09

    申请人： CORNING INCORPORATED

    发明人： BI, Hui ,  HUANG, Fuqiang ,  LIU, Xinyuan ,  SONG, Zhen ,  TANG, Yufeng ,  XIU, Tongping

    IPC分类号： C23C14/06 ,  C23C16/26

    CPC分类号： C23C16/26 ,  C01B32/186 ,  C01B32/198

    摘要： Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 K Ω/sq.

    摘要翻译： 这里公开的是用于在衬底上形成石墨烯膜的方法，所述方法包括：通过第一气相沉积步骤将石墨烯沉积在衬底的表面上以形成不连续的石墨烯晶体层; 在不连续的石墨烯晶体层上沉积石墨烯氧化物层以形成复合层; 以及通过第二气相沉积步骤将石墨烯沉积在复合层上，其中在第二气相沉积步骤期间氧化石墨烯层基本上还原成石墨烯层。 本文还公开了包含这种石墨烯膜的透明涂布的基材，其中石墨烯膜具有小于约10KΩ/ sq的电阻。

    LAMINATED FILM
    9.
    发明申请
    LAMINATED FILM 审中-公开
    层压膜

    公开(公告)号：WO2017078133A1

    公开(公告)日：2017-05-11

    申请号：PCT/JP2016/082783

    申请日：2016-11-04

    申请人： TETRA LAVAL HOLDINGS & FINANCE S.A. ,  KEIO UNIVERSITY

    发明人： SUZUKI, Tetsuya ,  FUTAGAMI, Yuya ,  SHIRAKURA, Akira ,  ONO, Kazuya

    IPC分类号： C23C16/54 ,  C23C16/40 ,  C23C16/26 ,  C08J7/14

    CPC分类号： C23C16/545 ,  C23C16/26 ,  C23C16/401

    摘要： The aim of the present invention lies in inexpensively providing a thin-film laminated film having excellent barrier properties. A further aim of the present invention lies in providing a method for producing a thin-film laminated film in which a plurality of thin films are coated on a plastic film by means of atmospheric-pressure plasma CVD which has low equipment costs and running costs, and also in providing a thin-film laminated film production apparatus which is able to operate continuously for a long period of time and can produce high-speed coating. A thin film according to the present invention includes a plastic film, a first silicon oxide-based thin film containing silicon oxide as the main component, and a first amorphous carbon-based thin film. The first amorphous carbon-based thin film is formed on the first silicon oxide-based thin film. The first silicon oxide-based thin film has pinholes with a diameter in the range of 10-200 nm.

    摘要翻译： 本发明的目的在于以低成本提供具有优异阻隔性能的薄膜层压膜。 本发明的另一个目的在于提供一种制造薄膜层压薄膜的方法，其中借助于具有低设备成本和运行成本的常压等离子体CVD将多个薄膜涂覆在塑料薄膜上， 并且还提供一种能够长时间连续操作并能够产生高速涂布的薄膜层压膜生产设备。 根据本发明的薄膜包括塑料膜，包含氧化硅作为主要成分的第一氧化硅基薄膜和第一无定形碳基薄膜。 第一无定形碳基薄膜形成在第一氧化硅基薄膜上。 第一种氧化硅基薄膜具有直径在10-200nm范围内的针孔。

    그래핀 복합 금속와이어 및 그의 제조방법
    10.
    发明申请
    그래핀 복합 금속와이어 및 그의 제조방법 审中-公开
    石墨复合金属线及其制造方法

    公开(公告)号：WO2017039055A1

    公开(公告)日：2017-03-09

    申请号：PCT/KR2015/010160

    申请日：2015-09-25

    申请人： 전자부품연구원

    发明人： 김형근 ,  양우석 ,  유세현

    IPC分类号： H01B5/02 ,  H01B1/02 ,  C23C16/26

    CPC分类号： C23C16/26 ,  H01B1/02 ,  H01B5/02

    摘要： 본 발명에서는 미세선이면서도 고강도이고 경량화되어 고전도 특성의 신뢰성이 향상된 그래핀 복합 금속와이어 및 그의 제조방법이 개시된다. 본 발명에 따른 표면에 그래핀층이 형성된 그래핀 복합 금속와이어 제조방법은 구리합금 와이어를 포함하는 금속와이어를 준비하는 단계; 금속와이어의 표면에 카본소스를 포함하는 카본소스층을 형성하는 단계; 및 마이크로웨이브 또는 백색광 중 적어도 어느 하나를 조사하여 금속와이어 표면에 그래핀층을 형성하는 단계를 포함한다.

    摘要翻译： 公开了一种石墨烯复合金属丝及其制造方法，该石墨烯复合金属丝具有高强度和轻质的同时是细线，从而具有改进的高导电性能的可靠性。 根据本发明的制造在其表面上具有石墨烯层的石墨烯复合金属线的方法包括以下步骤：制备包括铜合金线的金属线; 在金属丝的表面上形成包含碳源的碳源层; 并照射微波和白光中的至少一种，以在金属线的表面上形成石墨烯层。