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    DUAL MODE IMAGING DEVICES
    1.
    发明申请
    DUAL MODE IMAGING DEVICES 审中-公开

    公开(公告)号：WO2020234645A1

    公开(公告)日：2020-11-26

    申请号：PCT/IB2020/000393

    申请日：2020-05-21

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： HWANG, Sungin ,  BRADY, Frederick ,  BASAVALINGAPPA, Adarsh ,  SUWA, Taisuke ,  TIMMERMANS, Michiel

    IPC: G01S17/00 ,  H01L27/146 ,  G01S7/4914

    Abstract: An imaging device includes a first pixel. The first pixel includes a first photoelectric conversion region, and first and second transistors coupled to the first photoelectric conversion region to transfer charge generated by the first photoelectric conversion region. The imaging device includes a first driving circuit and a second driving circuit to drive the first pixel in a first mode and a second mode, the first mode being a mode in which the first driving circuit applies a first set of transfer signals to the first and second transfer transistors, the second mode being a mode in which the second driving circuit applies a transfer signal to only one of the first and second transfer transistors.

    IMAGING DEVICES AND IMAGING APPARATUSES, AND METHODS FOR THE SAME
    3.
    发明申请
    IMAGING DEVICES AND IMAGING APPARATUSES, AND METHODS FOR THE SAME 审中-公开

    公开(公告)号：WO2021112150A1

    公开(公告)日：2021-06-10

    申请号：PCT/JP2020/044941

    申请日：2020-12-02

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： HWANG, Sungin ,  MOSTAFALU, Pooria ,  BRADY, Frederick

    IPC: H01L27/146

    Abstract: An imaging device includes a first pixel including a first photoelectric conversion region disposed in a first substrate and that converts incident light into first electric charges, and a first readout circuit including a first converter that converts the first electric charges into a first logarithmic voltage signal. The first converter includes a first transistor coupled to the first photoelectric conversion region and a second transistor coupled to the first transistor. The imaging device includes a wiring layer on the first substrate and includes a first level of wirings arranged in a first arrangement overlapping the first photoelectric conversion region and in a second arrangement overlapping the first and second transistors, the second arrangement being different than the first arrangement.

    CAPACITANCE MATCHED METAL WIRINGS IN DUAL CONVERSION GAIN PIXELS
    4.
    发明申请
    CAPACITANCE MATCHED METAL WIRINGS IN DUAL CONVERSION GAIN PIXELS 审中-公开

    公开(公告)号：WO2020234649A1

    公开(公告)日：2020-11-26

    申请号：PCT/IB2020/000399

    申请日：2020-05-21

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： BRADY, Frederick ,  BASAVALINGAPPA, Adarsh ,  SUWA, Taisuke ,  TIMMERMANS, Michiel ,  HWANG, Sungin

    IPC: G01S7/4863 ,  G01S17/894 ,  H01L27/146 ,  H04N5/374

    Abstract: An imaging device includes a pixel including a photoelectric conversion region, a first transfer transistor coupled to the photoelectric conversion region, a first floating diffusion, a second floating diffusion, a second transfer transistor coupled between the first floating diffusion and the second floating diffusion to control access to the second floating diffusion, a third transfer transistor coupled to the photoelectric conversion region, a third floating diffusion coupled, a fourth floating diffusion, and a fourth transfer transistor coupled between the third floating diffusion and the fourth floating diffusion to control access to the fourth floating diffusion. The imaging device includes a first wiring layer including a first wiring connected to the second floating diffusion, a second wiring connected to the fourth floating diffusion, and a third wiring connected to ground and capacitively coupled with the first wiring and the second wiring.

    IMAGING DEVICES AND IMAGING APPARATUSES, AND METHODS FOR THE SAME
    5.
    发明申请
    IMAGING DEVICES AND IMAGING APPARATUSES, AND METHODS FOR THE SAME 审中-公开

    公开(公告)号：WO2021044803A1

    公开(公告)日：2021-03-11

    申请号：PCT/JP2020/030373

    申请日：2020-08-07

    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    Inventor： MOSTAFALU, Pooria ,  HWANG, Sungin ,  BRADY, Frederick

    IPC: H01L27/146

    Abstract: An imaging device includes a first pixel. The first pixel includes a first photoelectric conversion region disposed in a first substrate and that converts incident light into first electric charges. The first pixel includes a first readout circuit including a first converter that converts the first electric charges into a first logarithmic voltage signal. The imaging device includes at least one bonding pad on the first substrate and in electrical contact with the first converter. The at least one bonding pad overlaps at least part of the first pixel.

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