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公开(公告)号：WO2009070968A1
公开(公告)日：2009-06-11
申请号：PCT/CN2008/001857
申请日：2008-11-07
Applicant: 安集微电子(上海)有限公司 , 宋伟红 , 包建鑫 , 姚颖
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
Abstract: A chemical-mechanical polishing liquid is disclosed, which comprises silica doped by aluminum, mixed corrosive inhibitors, water and one or more kinds of the following rate-accelerators: organic acid, fluoride, ammonia, quaternary amine salts and the derivatives thereof. The polishing liquid has higher polishing rate for higher dielectric (such as TEOS), and can secure higher polishing rate adjustability of Cu adjusted by the concentration of oxidizer, and has better the effect of defect-correction, so it can suitably be used in controlling and adjusting the abrasion degree at different line width in semiconductor device.
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公开(公告)号：WO2009006784A1
公开(公告)日：2009-01-15
申请号：PCT/CN2008/001259
申请日：2008-07-01
Applicant: 安集微电子(上海)有限公司 , 陈国栋 , 宋伟红 , 姚颖 , 宋成兵
CPC classification number: C09G1/02 , C01B33/146 , C09C1/3081 , C09K3/1454
Abstract: The invention discloses a modified silicon dioxide sol, manufacturing method and use of the same, and a polishing liquid containing the same. The surface of the silicon dioxide of the modified silicon dioxide sol is bonded with epoxy-group-containing silane coupling agent. Modification is performed after mixing the silicon dioxide sol, surfactant and epoxy-group-containing silane coupling agent. Among the modified silicon dioxide sol according to the invention, surfaces of the silicon dioxide particles are grafted with epoxy groups, and on the one hand it can change hydrophilicity of the silicon dioxide particles, and on the other hand it can change the interaction between the silicon dioxide particles and the surfaces of wafer or polishing pad. Due to the improvement of the two properties, it can achieve higher polishing rates of TEOS and BD, and can bring less effect on polishing of Ta and Cu.
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公开(公告)号：WO2012051786A1
公开(公告)日：2012-04-26
申请号：PCT/CN2011/001453
申请日：2011-08-29
Applicant: 安集微电子(上海)有限公司 , 宋伟红 , 姚颖
IPC: C09G1/02
CPC classification number: C09G1/02 , H01L21/3212
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公开(公告)号：WO2011079512A1
公开(公告)日：2011-07-07
申请号：PCT/CN2010/002114
申请日：2010-12-21
Applicant: 安集微电子(上海)有限公司 , 宋伟红 , 姚颖
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053
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公开(公告)号：WO2010034181A1
公开(公告)日：2010-04-01
申请号：PCT/CN2009/001002
申请日：2009-09-04
Applicant: 安集微电子科技(上海)有限公司 , 姚颖 , 宋伟红
IPC: C09G1/02 , C09K3/14 , C07C229/04
CPC classification number: C09K3/1463 , C09G1/02 , H01L21/31053
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Patent Agency Ranking
公开(公告)号：WO2010012159A1
公开(公告)日：2010-02-04
申请号：PCT/CN2009/000863
申请日：2009-08-03
Applicant: 安集微电子(上海)有限公司 , 姚颖 , 宋伟红 , 荆建芬
IPC: C09G1/02 , C09K3/14 , H01L21/304
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463
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公开(公告)号：WO2009070967A1
公开(公告)日：2009-06-11
申请号：PCT/CN2008/001856
申请日：2008-11-07
Applicant: 安集微电子(上海)有限公司 , 宋伟红 , 姚颖 , 包建鑫 , 王淑敏
IPC: C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/31053
Abstract: A chemical-mechanical polishing liquid is disclosed, which comprises water, silica doped by metal and one or more kinds of the following rate-accelerators: organic acid, fluoride, ammonia, quaternary amine salts and the derivatives thereof. The polishing liquid has higher polishing rate for TEOS, higher selection ratio of removal rate for TEOS to one or more kinds material of SiN, BD, SiC and SiON. The chemical-mechanical polishing liquid still attains higher polishing rate for TEOS and better controlling ability for defect in the case of the lower content of abrasive. So the cost is extremely reduced.
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公开(公告)号：WO2008040183A1
公开(公告)日：2008-04-10
申请号：PCT/CN2007/002808
申请日：2007-09-24
Applicant: 安集微电子(上海)有限公司 , 荆建芬 , 宋伟红 , 陈国栋 , 姚颖
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: A chemical-mechanical polishing liquid for polishing low-dielectric material is disclosed, which comprises abrasive particles, corrosion inhibitor, oxidizer and water, and the characteristic of the liquid is in that further comprises at least one kind of accelerator. The polishing liquid have higher removal rate for low-dielectric material under lower pressure, and also have higher removal rate for other material such as metal copper (Cu), silica (Teos), metal tantalum (Ta)/ tantalum nitride (TaN) barrier and the like.
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公开(公告)号：WO2013091275A1
公开(公告)日：2013-06-27
申请号：PCT/CN2012/001018
申请日：2012-07-30
Applicant: 安集微电子(上海)有限公司 , 孙伟红 , 姚颖 , 孙展龙
IPC: C09G1/02
CPC classification number: C09G1/02
Abstract: 一种用于硅通孔阻挡层平坦化的化学机械抛光液，至少含有一种磨料和氮化硅抛光速率抑制剂。该抛光液具有较高的二氧化硅去除速率，和较低的氮化硅去除速率，能够对硅通孔阻挡层进行高效的平坦化，同时不产生金属腐蚀，且对金属铜的去除可线性调节，具有较高的缺陷校正能力和较低的表面污染物指标。
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