Abstract:
A lithographic apparatus is disclosed. The lithographic apparatus includes a radiation source (SO) that produces EUV radiation, an illumination system (IL) that provides a beam of the EUV radiation produced by the radiation source, and a support structure (MT) that supports a patterning structure (MA). The patterning structure is configured to impart the beam of radiation with a pattern in its cross-section. The apparatus also includes a substrate support (WT) that supports a substrate (W), and a projection system (PL) that projects the patterned beam onto a target portion (C) of the substrate. The radiation source includes a debris-mitigation system (6, 7) that mitigates debris particles which are formed during production of EUV radiation. The debris-mitigation system is configured to provide additional particles (3) for interacting with the debris particles (2).