Abstract:
A method includes preparing a thermoelectric material including p-type or n-type material and first and second caps including transition metal(s). A powder precursor of the first cap can be loaded into a sintering die, punches assembled thereto, and a pre-load applied to form a first pre-pressed structure including a first flat surface. A punch can be removed, a powder precursor of the p-type or n-type material loaded onto that surface, the punch assembled to the die, and a second pre-load applied to form a second pre-pressed structure including a second substantially flat surface.
Abstract:
Apparatus and method for generating electricity. The apparatus includes one or more first components configured to extract heat from at least a first fluid flow at a first temperature to one or more devices configured to convert thermal energy to electric energy. The first fluid flow is in a first direction. Additionally, the apparatus includes one or more second components configured to transfer heat from the one or more devices to at least a second fluid flow at a second temperature. The second temperature is lower than the first temperature, and the second fluid flow is in a second direction. Each first part of the first fluid flow corresponds to a first shortest distance to the one or more devices, and the first shortest distance is less than half the square root of the total free flow area for a corresponding first cross-section of the first fluid flow.
Abstract:
A thermoelectric device and methods thereof. The thermoelectric device includes nanowires, a contact layer, and a shunt. Each of the nanowires includes a first end and a second end. The contact layer electrically couples the nanowires through at least the first end of each of the nanowires. The shunt is electrically coupled to the contact layer. All of the nanowires are substantially parallel to each other. A first contact resistivity between the first end and the contact layer ranges from10 -13 Ω-m 2 to 10 -7 Ω-m 2 . A first work function between the first end and the contact layer is less than 0.8 electron volts. The contact layer is associated with a first thermal resistance ranging from 10 -2 K/W to 10 10 K/W.
Abstract:
A structure and method for at least one array of nanowires partially embedded in a matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first segment associated with a first end, a second segment associated with a second end, and a third segment between the first segment and the second segment. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. The third segment is substantially surrounded by the one or more fill materials. The first segment protrudes from the one or more fill materials.
Abstract:
A thermoelectric generator includes a tapered inlet manifold including first and second non- parallel sides; first and second pluralities of outlet manifolds; and thermoelectric generating units (TGUs) each including a hot-side heat exchanger (HHX) with inlet and outlet; a cold- side heat exchanger (CHX); and thermoelectric devices arranged between the HHX and CHX. The inlets of some of the HHXs receive exhaust gas from the first side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the first plurality of outlet manifolds. The inlets of other of the HHXs receive exhaust gas from the second side of the tapered inlet manifold and the outlets of those HHXs are coupled to outlet manifolds of the second plurality of outlet manifolds. The thermoelectric devices can generate electricity responsive to a temperature differential between the exhaust gas and the CHXs.
Abstract:
A thermoelectric generating unit includes a hot-side heat exchanger (HHX) including one or more discrete channels and substantially flat first and second cold-side plates. A first plurality of thermoelectric devices are between the first cold-side plate and a first side of the HHX; and a second plurality of thermoelectric devices can be between the second cold-side plate and a second side of the HHX. Fasteners can extend between the first and second cold- side plates at locations outside of the HHX channel(s). The fasteners can be disposed within gaps between the thermoelectric devices of the first plurality and within gaps between the thermoelectric devices of the second plurality. The fasteners can compress the first plurality of thermoelectric devices between the first cold-side plate and the first side of the HHX and can compress the second plurality of thermoelectric devices between the second cold-side plate and the second side of the HHX.
Abstract:
An array of nanowires and method thereof. The array of nanowires includes a plurality of nanowires. The plurality of nanowires includes a plurality of first ends and a plurality of second ends respectively. For each of the plurality of nanowires, a corresponding first end selected from the plurality of first ends and a corresponding second end selected from the plurality of second ends are separated by a distance of at least 200 mum. All nanowires of the plurality of nanowires are substantially parallel to each other.
Abstract:
A uniwafer device for thermoelectric applications includes one or more first thermoelectric elements and one or more second thermoelectric elements comprising respectively a first and second patterned portion of a substrate material. Each first/second thermoelectric element is configured to be functionalized as an n-/p-type semiconductor with a thermoelectric figure of merit ZT greater than 0.2. The second patterned portion is separated from the first patterned portion by an intermediate region functionalized partially for thermal isolation and/or partially for electric interconnecting. The one or more first thermoelectric elements and the one or more second thermoelectric elements are spatially configured to allow formation of a first contact region and a second contact region respectively connecting to each of the one or more first thermoelectric elements and/or each of the one or more second thermoelectric elements to form a continuous electric circuit.