Abstract:
A method of producing particles containing metal oxide for use in semiconductor devices includes the steps of heating metal-containing particles in a flame produced by a mixture of oxygen and a fuel component comprising at least one combustible gas selected from hydrogen and hydrocarbons, the oxygen being present in the mixture in a proportion of not less than 10 mole% below, and not more than 60 mole% above, a stoichiometric amount relative to the fuel component, so as to oxidize metal in at least an outer shell of the particles; cooling the oxidized particles by feeding them into a liquid or sublimable solid medium; collecting the cooled oxidized particles; and providing a distance between entry of the particles into the flame and collection of the particles of at least 300mm. In this manner, such particles may be oxidized so as to provide a shell of metal oxide material which leaving unoxidized a core of metal. A semiconductive layer of such particles on a substrate may be formed by feeding, to a hot zone, such preoxidized metal-containing particles; heating the metal-containing particles in the hot zone to render the particles at least partially molten; and depositing the particles in the at least partially molten state onto the substrate. The above oxidation process may be employed to provide metal oxide particles in which different respective metals having different respective valencies are present in different respective molar proportions. The valencies and molar proportions may be selected so as to provide n- or p-type semiconductor layers.
Abstract:
The present invention relates to a self-regulating electrical resistance heating element, to an appliance containing same, and to processes for their manufacture. The self regulating electrical resistance heating element (10) comprises a substrate (12) comprising an electrically conductive coating (12a) which serves as a first electrical contact (18) on one side of the composite metal oxide layers. Disposed on said electrically conductive layer (12a) is a first metal oxide (14) which has a positive temperature coefficient of resistance. Overlaying the first metal oxide layer, and in electrical series thereto, is a second metal oxide layer (16) having a negative temperature coefficient of resistance and overlaying this layer is a second electrical contact (20). The second metal oxide layer (16) having a negative temperature coefficient of resistance is applied to the element in a manner which ensures it's resistive characteristics are not altered.
Abstract:
A method of producing particles containing metal oxide for use in semiconductor devices includes the steps of heating metal-containing particles in a flame produced by a mixture of oxygen and a fuel component comprising at least one combustible gas selected from hydrogen and hydrocarbons, the oxygen being present in the mixture in a proportion of not less than 10 mole% below, and not more than 60 mole% above, a stoichiometric amount relative to the fuel component, so as to oxidize metal in at least an outer shell of the particles; cooling the oxidized particles by feeding them into a liquid or sublimable solid medium; collecting the cooled oxidized particles; and providing a distance between entry of the particles into the flame and collection of the particles of at least 300mm. In this manner, such particles may be oxidized so as to provide a shell of metal oxide material which leaving unoxidized a core of metal. A semiconductive layer of such particles on a substrate may be formed by feeding, to a hot zone, such preoxidized metal-containing particles; heating the metal-containing particles in the hot zone to render the particles at least partially molten; and depositing the particles in the at least partially molten state onto the substrate. The above oxidation process may be employed to provide metal oxide particles in which different respective metals having different respective valencies are present in different respective molar proportions. The valencies and molar proportions may be selected so as to provide n- or p-type semiconductor layers.
Abstract:
An electrically resistive heating element for liquids and a method of fabricating same. The heating element comprises a substrate (10) formed of an electrically insulating material or formed of an electrically conductive material provided with an electrically insulating coating, whereby in both cases the substrate (10) presents an electrically non-conductive surface on at least one side. First (14a) and second (14b) laterally spaced contact areas are disposed over the electrically non-conductive surface and a thermally sprayed resistive oxide layer (16) is applied to the electrically non-conductive surface and disposed over or under parts of the contact areas (14a, 14b) to enable an electric current to be passed through the resistive oxide layer (16) via these first and second contact areas.
Abstract:
The present invention relates to a self-regulating electrical resistance heating element, to an appliance containing same, and to processes for their manufacture. The self regulating electrical resistance heating element comprises · a non-electrically conductive substrate (12); · a first metal oxide (14) having a positive or negative temperature coefficient of resistance below a predetermined operating temperature deposited on said substrate; · a second metal oxide (16) having a temperature coefficient of resistance opposite to that of said first metal oxide deposited on said substrate adjacent said first metal oxide; and · first and second electrical contacts (18; 20) disposed such that a current can pass between the contacts through the first and second metal oxides. By placing the respective metal oxides, in e.g. discreet lines, tracks or areas, adjacent one another, with a contact there between or with a sufficient overlap to ensure a good electrical contact it is possible to provide self-regulating electrical resistance heating elements for applications where a large area (compared to 20 e.g. a kettle element) is needed, such as might be the case in a washing machine, dishwasher or tumble dryer.
Abstract:
The present invention relates to a self-regulating electrical resistance heating element, to an appliance containing same, and to processes for their manufacture. The self regulating electrical resistance heating element (10) comprises a substrate (12) comprising an electrically conductive coating (12a) which serves as a first electrical contact (18) on one side of the composite metal oxide layers. Disposed on said electrically conductive layer (12a) is a first metal oxide (14) which has a positive temperature coefficient of resistance. Overlaying the first metal oxide layer, and in electrical series thereto, is a second metal oxide layer (16) having a negative temperature coefficient of resistance and overlaying this layer is a second electrical contact (20). The second metal oxide layer (16) having a negative temperature coefficient of resistance is applied to the element in a manner which ensures it's resistive characteristics are not altered.
Abstract:
A method for forming an electrical heating element by flame spraying a metal/metallic oxide matrix, wherein a flame sprayed metal/metallic oxide matrix is deposited onto an insulating or conductive substrate such as to have a higher resistance than is required for a designed use, and an intermittently pulsed high voltage DC supply is applied across the matrix such as to produce continuous electrically conductive paths through the matrix which permanently increase the overall conduction and simultaneously reduce the overall resistance of the metal/metallic matrix to achieve a desired resistance value.
Abstract:
A method of constructing a photovoltaic diode capable of generating electrical energy from exposure to radiation, the method comprising the steps of: (a) preparing dry metal powders of non symmetrical shaped particles, having sizes in the range of 1 to 145 microns; (b) preparing the surface of a supporting substrate such that the surface is substantially chemically clean and electrically conductive; (c) cooling the surface of the supporting substrate to a temperature within the range -200 to -20 DEG C; and (d) heating the dry metal powders to a temperature at which the particles thereof become partially molten, thus at least partially oxidising the metal, depositing the molten oxides onto said surface of the supporting substrate to form a laminate of oxide matrices having alternate layers of n type and p type characteristics and depositing an electrically conducting layer onto the oxide laminate.