Abstract:
The invention relates to a photovoltaic article comprising a first photovoltaic cell (11) having a photoelectrical^ active region which is located between a topside electrode (12) and a backside electrode (14). An electrical connector (13) is in contact with the backside electrode (14) on the backside of the cell and an electrically conductive patch (15) is located over at least a portion of both the backside electrode (14) and the connector (13).
Abstract:
The present invention provides strategies for improving the adhesion between a barrier region, a transparent conductive region, and/or an electrically conductive grid through the use of an adhesion promoting region. The adhesion promoting region is optically transmissive and comprises a metal layer, a metal nitride layer, a metal carbide layer, or a combination thereof and preferably comprises at least one of Cr, Ti, Ta, and Zr or a combination thereof. These strategies are particularly useful in the fabrication of heterojunction photovoltaic devices such as chalcogenide-based solar cells. Adhesion is improved to such a degree that grid materials and dielectric barrier materials can cooperate to provide a hermetic seal over devices to protect against damage induced by environmental conditions, including damage due to water intrusion. The adhesion promoting region also serves as a barrier to the migration of Na, Li, and the lanthanoid series of elements.
Abstract:
A method of manufacturing electrically interconnected solar cell assemblies, including the steps of: positioning at least a first interconnect element (64) in an alignment feature of a top carrier and facing a top surface of a first photovoltaic cell (60); adhering the first interconnect element to a location on the top surface of the first cell, wherein a length of the first interconnect element extends beyond a trailing edge (68) of the first cell; and adhering a portion of the length of the first interconnect element that extends beyond a trailing edge of the first cell to the bottom surface of a second cell (62). In one aspect, a system is provided for assembling solar cell strings, including cell transfer equipment, a bottom pallet including grooves, multiple top pallets including grooves, an adhesive dispensing system, a ribbon supply mechanism, and a system for moving ribbons and top pallets.
Abstract:
Chalcogenide based photovoltaic devices cells with good resistance to environmental elements can be formed by direct low temperature deposition of inorganic barrier layers onto the film. A unique multilayer barrier can be formed in a single step when reactive sputtering of the silicon nitride onto an inorganic oxide top layer of the PV device.
Abstract:
The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.
Abstract:
The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.
Abstract:
The invention relates to a photovoltaic article comprising a first photovoltaic cell having a photoelectrically active region which is located between a topside electrode and a backside electrode. An electrical connector is in contact with the backside electrode on the backside of the cell and an electrically conductive patch is located over at least a portion of both the backside electrode and the connector.
Abstract:
The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).
Abstract:
A method of manufacturing electrically interconnected solar cell assemblies, including the steps of: positioning at least a first interconnect element in an alignment feature of a top carrier and facing a top surface of a first photovoltaic cell; adhering the first interconnect element to a location on the top surface of the first cell, wherein a length of the first interconnect element extends beyond a trailing edge of the first cell; and adhering a portion of the length of the first interconnect element that extends beyond a trailing edge of the first cell to the bottom surface of a second cell. In one aspect, a system is provided for assembling solar cell strings, including cell transfer equipment, a bottom pallet including grooves, multiple top pallets including grooves, an adhesive dispensing system, a ribbon supply mechanism, and a system for moving ribbons and top pallets.
Abstract:
The invention is a photovoltaic article comprising a first photovoltaic cell having a photoelectrically active region which is located between a topside electrode and a backside electrode, at least one first interconnect element in contact with the frontside electrode at a front surface of the cell and the interconnect element is adhered to the topside electrode of the cell, and at least one second interconnect element adhered to the backside electrode. An electronically conductive adhesive having a low Tg is used to adhere the interconnect element to the frontside electrode. The ECA used to adhere the second interconnect element to the backside electrode is characterized by at least one of the following features: a glass transition temperature of at least 85 C and the backside electrically conductive adhesive comprises a metal chelation compound characterized by the presence of a heterocyclic component comprising one of O, N, or S in a ring configuration and at least one additional heteroatom selected from O, N, or S.