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    MULTI-TRACK MAGNETRON EXHIBITING MORE UNIFORM DEPOSITION AND REDUCED ROTATIONAL ASYMMETRY
    2.
    发明申请
    MULTI-TRACK MAGNETRON EXHIBITING MORE UNIFORM DEPOSITION AND REDUCED ROTATIONAL ASYMMETRY 审中-公开
    多轨磁铁展示更均匀的沉积和减少的旋转不对称

    公开(公告)号：WO2006074013A1

    公开(公告)日：2006-07-13

    申请号：PCT/US2005/047292

    申请日：2005-12-29

    申请人： APPLIED MATERIALS, INC. ,  YANG, Hong, S. ,  GUNG, Tza-Jing ,  LEI, Jian-Xu ,  GUO, Ted

    发明人： YANG, Hong, S. ,  GUNG, Tza-Jing ,  LEI, Jian-Xu ,  GUO, Ted

    IPC分类号： C23C14/35

    CPC分类号： H01J37/3408 ,  H01J37/3405

    摘要： A multi-track magnetron having a convolute shape and asymmetric about the target center (14) about which it rotates. A plasma track (166) is formed as a closed loop between opposed inner magnetic pole (162) and outer magnetic pole (164), preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=ar n . After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.

    摘要翻译： 具有卷绕形状并且围绕其旋转的目标中心（14）不对称的多轨磁控管。 等离子体轨道166形成为相对的内磁极（162）和外磁极（164）之间的闭环，优选为相对于目标中心的两个或三个径向排列和螺旋形的反向传播轨迹 经过旋转轴。 可以优化极点形状以产生符合函数L = ar的累积轨道长度分布

    UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION
    4.
    发明申请
    UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION 审中-公开

    公开(公告)号：WO2007016013A3

    公开(公告)日：2007-02-08

    申请号：PCT/US2006/028582

    申请日：2006-07-24

    申请人： APPLIED MATERIALS, INC. ,  RITCHIE, Alan A. ,  LEE, Wei Ti ,  GUO, Ted

    发明人： RITCHIE, Alan A. ,  LEE, Wei Ti ,  GUO, Ted

    IPC分类号： C23C16/00

    摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

    ALUMINUM SPUTTERING WHILE BIASING WAFER
    5.
    发明申请
    ALUMINUM SPUTTERING WHILE BIASING WAFER 审中-公开

    公开(公告)号：WO2007024465A3

    公开(公告)日：2007-03-01

    申请号：PCT/US2006/030784

    申请日：2006-08-08

    申请人： APPLIED MATERIALS, INC. ,  LEE, Wei, Ti ,  GUO, Ted ,  YO, Sang-ho

    发明人： LEE, Wei, Ti ,  GUO, Ted ,  YO, Sang-ho

    IPC分类号： C23C14/35 ,  H01L21/44

    摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors (168, 170). The first step (130) includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 15O0C, and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step (132) includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 25O0C, and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be (80) relatively small and unbalanced in the first step and (60) relatively large and balanced in the second step.

    ALUMINUM SPUTTERING WHILE BIASING WAFER
    6.
    发明申请
    ALUMINUM SPUTTERING WHILE BIASING WAFER 审中-公开
    漂白抛光铝铝溅射

    公开(公告)号：WO2007024465A2

    公开(公告)日：2007-03-01

    申请号：PCT/US2006030784

    申请日：2006-08-08

    申请人： APPLIED MATERIALS INC ,  LEE WEI TI ,  GUO TED ,  YO SANG-HO

    发明人： LEE WEI TI ,  GUO TED ,  YO SANG-HO

    IPC分类号： C23C14/00

    CPC分类号： C23C14/185 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345

    摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors (168, 170). The first step (130) includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 15O0C, and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step (132) includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 25O0C, and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be (80) relatively small and unbalanced in the first step and (60) relatively large and balanced in the second step.

    摘要翻译： 铝溅射工艺包括RF偏置晶片和两步铝填充工艺和装置，用于通过在两个明显不同的条件下优选在两个不同的等离子体溅射反应器（168,170）中的溅射将铝填充到窄通孔中。 第一步骤（130）包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相对高度偏置以将铝原子吸引到窄孔中并蚀刻突出端。 第二步骤（132）包括在相对温暖的晶片上的更中性的溅射。 保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。 在第一步中围绕铝靶的背面扫描的磁控管可能（80）相对较小并且不平衡，（60）在第二步中相对较大和平衡。

    UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION
    7.
    发明申请
    UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION 审中-公开
    CVD阻塞板防止颗粒形成的独特钝化技术

    公开(公告)号：WO2007016013A2

    公开(公告)日：2007-02-08

    申请号：PCT/US2006028582

    申请日：2006-07-24

    申请人： APPLIED MATERIALS INC ,  RITCHIE ALAN A ,  LEE WEI TI ,  GUO TED

    发明人： RITCHIE ALAN A ,  LEE WEI TI ,  GUO TED

    IPC分类号： C23C14/32 ,  C23C16/00 ,  C23F1/00

    CPC分类号： C23C16/45561 ,  C23C14/165 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45591 ,  Y10T29/497 ,  Y10T29/49826 ,  Y10T137/0491 ,  Y10T137/9029

    摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

    摘要翻译： 提供用于化学气相沉积室的阻挡板和处理阻挡板的方法。 阻挡板限定穿过其中的多个孔并且具有至少约99.5％纯度的上表面和下表面，其使阻挡板上污染颗粒的成核最小化。 可以在阻挡板的上表面和下表面上形成物理气相沉积涂层，例如铝物理气相沉积涂层。 还提供包括其上具有物理气相沉积涂层的阻挡板的化学气相沉积室。