公开(公告)号：WO2007061175A1

公开(公告)日：2007-05-31

申请号：PCT/KR2006/003625

申请日：2006-09-12

Applicant: HANVISION CO., LTD. ,  HANNEBAUER, Robert Steven

Inventor： HANNEBAUER, Robert Steven

IPC: H01L27/146

CPC classification number: H01L31/103 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14685 ,  H01L31/02165 ,  H01L31/022408 ,  H01L31/03921 ,  H01L31/1804 ,  Y02E10/547

Abstract: The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection.

Abstract translation: 本发明涉及一种使用三维多层基板的图像传感器的光电二极管，更具体地说，涉及一种实现掩埋型光电二极管及其结构的方法，以及用于将光电二极管连接到 多层衬底和用于信号检测的晶体管。

公开(公告)号：WO2007032632A1

公开(公告)日：2007-03-22

申请号：PCT/KR2006/003624

申请日：2006-09-12

Applicant: HANVISION CO., LTD. ,  HANNEBAUER, Robert, Steven

Inventor： HANNEBAUER, Robert, Steven

IPC: H01L27/12

CPC classification number: H01L27/1469 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14689

Abstract: The present invention relates to semiconductor process technology. That is, the present invention relates to the fabrication of a three-dimensional semiconductor structure and a semiconductor device and an optical image sensor having the device as an active pixel. According to the present invention, a buffer oxide film, a nitride film, and an ONO dielectric layer are formed on a handle wafer. A semiconductor layer and an oxide film are formed on a donor wafer. The donor wafer is turned over through a layer transfer process and is then bonded to a top surface of the handle wafer. Silicon of the donor wafer is then removed. In the same manner, blue, green, and red diode layers, and a transistor layer are sequentially formed. A metal layer is formed on the transistor layer. Inter-elements contact and pixel separation processes are performed and a support layer is bonded. The whole device is turned over and the nitride film is etched using an etch-stop layer, thus removing the handle wafer. After the elements are separated, packaging is performed to complete the device. Therefore, a back illuminated image sensor of a multi-layer structure can be provided.

Abstract translation: 本发明涉及半导体工艺技术。 也就是说，本发明涉及三维半导体结构和半导体器件的制造以及具有该器件作为有源像素的光学图像传感器。 根据本发明，在手柄晶片上形成缓冲氧化膜，氮化物膜和ONO电介质层。 在施主晶片上形成半导体层和氧化物膜。 施主晶片通过层转移工艺翻转，然后结合到处理晶片的顶表面。 然后去除施主晶片的硅。 以相同的方式，依次形成蓝，绿，红二极管层和晶体管层。 金属层形成在晶体管层上。 进行元件间接触和像素分离处理并且结合支撑层。 整个器件翻转，并且使用蚀刻停止层蚀刻氮化物膜，从而去除处理晶片。 元件分离后，执行封装以完成设备。 因此，可以提供多层结构的背照式图像传感器。

公开(公告)号：WO2008035861A1

公开(公告)日：2008-03-27

申请号：PCT/KR2007/004141

申请日：2007-08-29

Applicant: HANVISION CO., LTD. ,  HANNEBAUER, Robert, Steven ,  YOO, Sang Keun

Inventor： HANNEBAUER, Robert, Steven ,  YOO, Sang Keun

IPC: H01L31/02

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

Abstract: The present invention relates to a semiconductor device, and more particularly, a semiconductor device having a multi-level photodiode structure to maximize quantum efficiency for each wavelength. The semiconductor device includes a plurality of photodiode layers formed in a multi-level structure, an all-reflection layer formed under the photodiode layers, and a transistor layer formed under the all-reflection layer. Internal filter stacks respectively corresponding to wavelengths can be formed on the photodiode layers. Otherwise, external color filters such as anti-reflection coating layers or IR filters, which respectively correspond to wavelengths, can be added to the semiconductor device.

Abstract translation: 本发明涉及一种半导体器件，更具体地说，涉及具有多级光电二极管结构的半导体器件，以使每种波长的量子效率最大化。 半导体器件包括以多层结构形成的多个光电二极管层，形成在光电二极管层下的全反射层，以及形成在全反射层下的晶体管层。 分别对应于波长的内部滤波器叠层可以形成在光电二极管层上。 否则，可以将分别对应于波长的诸如防反射涂层或IR滤光器的外部滤色器添加到半导体器件中。