公开(公告)号：WO2007067003A1

公开(公告)日：2007-06-14

申请号：PCT/KR2006/005317

申请日：2006-12-08

Applicant: LG CHEM, LTD. ,  LEE, Jung-Hee ,  KIM, Jong-Pil ,  YI, Gi-Ra ,  MOON, Kwang-Ik ,  KO, Chang-Bum ,  JANG, Soon-Ho ,  CHO, Seung-Beom ,  HONG, Young-Jun

Inventor： LEE, Jung-Hee ,  KIM, Jong-Pil ,  YI, Gi-Ra ,  MOON, Kwang-Ik ,  KO, Chang-Bum ,  JANG, Soon-Ho ,  CHO, Seung-Beom ,  HONG, Young-Jun

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

Abstract: Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

Abstract translation: 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。