MULTI-CELL TRANSISTOR
    1.
    发明申请
    MULTI-CELL TRANSISTOR 审中-公开
    多单元晶体管

    公开(公告)号:WO1987001867A1

    公开(公告)日:1987-03-26

    申请号:PCT/DE1986000327

    申请日:1986-08-25

    CPC classification number: H01L23/5256 H01L23/62 H01L2924/0002 H01L2924/00

    Abstract: The transistor described consists of a parallel-circuit arrangement of individual transistor cells (41, 42) for power division. In order to isolate automatically the defective cells, fuse-type sections (6, 7) are provided, which in the event of a short circuit isolate the said cells from the remainder. A voltage-controlled switch (9) is provided to improve the isolation provided by the basic fuse-type section (7).

    Abstract translation: 所描述的晶体管由用于功率分配的单独晶体管​​单元(41,42)的并联电路布置。 为了自动隔离有缺陷的单元,提供了熔断器型部分(6,7),其在短路的情况下将所述电池与其余部分隔离。 提供压控开关(9)以改善由基本熔丝型部分(7)提供的隔离。

    POWER SUPPLY SYSTEM
    2.
    发明申请
    POWER SUPPLY SYSTEM 审中-公开
    电源系统

    公开(公告)号:WO1990012449A1

    公开(公告)日:1990-10-18

    申请号:PCT/DE1990000213

    申请日:1990-03-21

    CPC classification number: H02J7/16 H02P9/305 Y02T10/7005

    Abstract: The proposal is for a power supply system, especially for motor vehicles, with a battery (6) and an alternator or three-phase generator (1) with a downstream rectifier (3), the voltage (U1) of which is limited by the cutting in and out of the field current of the generator (1) by means of a voltage regulator (4). The voltage regulator (4) detects the actual value of the voltage at the terminals of the generator (1) and generates a mean field current in the exciting field of the generator (1) in such a way that the voltage of the power supply system remains virtually constant, regardless of the load and rotation speed. Switchgear is provided in order to detect, by means of an auxiliary value at the terminals of the generator (1), any undesirable d.c. voltage drop in the power supply system on the line from the generator (1) to the battery (6) caused by the load current and to compensate it at least approximately. The a.c. voltage (V1) available at the terminals of the generator (1) may be used as the auxiliary value.

    VOLTAGE REGULATOR FOR A GENERATOR
    3.
    发明申请
    VOLTAGE REGULATOR FOR A GENERATOR 审中-公开
    发电机电压调节器

    公开(公告)号:WO1988001110A1

    公开(公告)日:1988-02-11

    申请号:PCT/DE1987000147

    申请日:1987-04-03

    CPC classification number: H02J7/244

    Abstract: The voltage regulator, contrary to the type described in DE-PS 27 38 897, has the additional feature that according to the relative duration of connection of the field current an integral component is formed, and this is fed into the regulating circuit proper. The relative duration of connection of the field current may thus be obtained more or less directly from the switching behaviour of the switching transistor (20) for the field current, or by means of a measurement resistor (33) connected in series to the excitation winding (21).

    Abstract translation: 与DE-PS 27 38 897中描述的类型相反的电压调节器具有额外的特征,根据场电流的相对连续持续时间形成一个整体分量,并将其馈送到调节电路中。 因此,可以直接从场电流的开关晶体管(20)的开关行为或通过与励磁绕组串联连接的测量电阻器(33)直接获得励磁电流的相对连续持续时间 (21)。

    GENERATOR SYSTEM
    5.
    发明申请
    GENERATOR SYSTEM 审中-公开
    发电机系统

    公开(公告)号:WO1982003731A1

    公开(公告)日:1982-10-28

    申请号:PCT/DE1982000042

    申请日:1982-03-03

    CPC classification number: H02H7/067 H02J7/16

    Abstract: On propose un systeme de generateur comprenant un generateur avec autoexcitation (1), un regleur de tension (3), un dispositif de transfert (4) pour la prise en charge du courant qui continue a circuler lors de la deconnexion de l'enroulement d'excitation (2) et un dispositif de reception (9) pour absorber l'energie de reaction lors de la coupure d'une charge (11) du generateur. Le dispositif de transfert (4) joue le role de la diode usuelle (13) de libre passage: il presente un cheminement de courant avec une tension de seuil de passage basse commutable sur une tension de seuil elevee. En fonctionnement normal du generateur (1) le bobinage d'excitation (2) est connecte sur le cheminement avec la tension de seuil de passage basse. Lorsque la charge (11) est separee du generateur, le bobinage d'excitation (2) est connecte au cheminement avec la tension de rupture elevee. Le courant d'excitation decroit rapidement. Ainsi l'energie de reaction qui doit renforcer la protection du reseau de bord (9) est fortement diminuee.

    VOLTAGE CONTROLLER
    6.
    发明申请
    VOLTAGE CONTROLLER 审中-公开
    电压控制器

    公开(公告)号:WO1990012443A1

    公开(公告)日:1990-10-18

    申请号:PCT/DE1990000236

    申请日:1990-03-23

    CPC classification number: H02J7/245 Y02T10/92

    Abstract: Proposed is a voltage controller (4) for a generator (1), in particular for use in motor vehicles, which, by switching the field current on and off by means of a controlled semiconductor, and acting together with a freewheel loop, generates a medium field current in the field coil (2) of the generator (1) so that the generator voltage remains approximately constant, independent of the load and the rotational speed. The voltage controller (4) includes an integrally acting component to compensate for load-dependent and speed-dependent errors, which is generated by means of a non-linear integrator from the relative time-to-make of the current flowing in the field coil (2) and is fed back to the voltage-controller control loop. Non-linearity of the integrator output is ensured by virtue of the fact that, to form the correction function, the part of the cycle while the current is flowing through the generator field coil (2) and through the controlled semiconductor is processed differently from the part of the cycle while current is flowing through the field coil (2) and through the freewheel diode.

    MONOLITHICALLY-INTEGRATED SEMICONDUCTOR DEVICES
    7.
    发明申请
    MONOLITHICALLY-INTEGRATED SEMICONDUCTOR DEVICES 审中-公开
    单片集成半导体器件

    公开(公告)号:WO1987001868A1

    公开(公告)日:1987-03-26

    申请号:PCT/DE1986000331

    申请日:1986-08-22

    CPC classification number: H01L27/0772

    Abstract: A semiconductor device monolithically integrated on a substrate comprising at least one power diode (3) has a cathode potential (6) higher than the substrate potential (5). Its anode forms the emitter and its cathode forms the basis of a parasitic substrate transistor (4). To reduce the power dissipation caused by this parasitic substrate transistor (4), means (8) are provided to increase the collector series resistance (41) of the parasitic transistor (4).

    Abstract translation: 整体地集成在包括至少一个功率二极管(3)的衬底上的半导体器件具有高于衬底电位(5)的阴极电位(6)。 其阳极形成发射极,其阴极形成寄生衬底晶体管(4)的基础。 为了减少由该寄生晶体管(4)引起的功耗,提供了用于增加寄生晶体管(4)的集电极串联电阻(41)的装置(8)。

    PRECISION REFERENCE-VOLTAGE SOURCE
    8.
    发明申请
    PRECISION REFERENCE-VOLTAGE SOURCE 审中-公开
    精密参考电压源

    公开(公告)号:WO1990012353A1

    公开(公告)日:1990-10-18

    申请号:PCT/DE1990000212

    申请日:1990-03-21

    CPC classification number: G05F3/30

    Abstract: Proposed is a monolithic-integrated precision reference-voltage source based on the bandgap principle and suitable for use over a wide temperature range. The parabolic temperature/reference-voltage curve produced by the source is made linear using the processing means available in the monolithic integration without the need for additional active components such as transistors and diodes. The precision voltage-reference source includes two resistors (21, 22) represented by the n-doped emitter diffusion zone.

    Abstract translation: 提出了一种基于带隙原理的单片集成精密基准电压源,适用于宽温度范围。 由源产生的抛物线温度/参考电压曲线使用单片集成中可用的处理装置进行线性化,而不需要诸如晶体管和二极管的附加有源元件。 精密电压基准源包括由n掺杂发射极扩散区表示的两个电阻器(21,22)。

    SEMICONDUCTOR DEVICE PROVIDED WITH A METAL LAYER
    9.
    发明申请
    SEMICONDUCTOR DEVICE PROVIDED WITH A METAL LAYER 审中-公开
    具有金属层的半导体器件

    公开(公告)号:WO1986003340A1

    公开(公告)日:1986-06-05

    申请号:PCT/DE1985000414

    申请日:1985-10-25

    CPC classification number: H01L23/5283 H01L2924/0002 H01L2924/00

    Abstract: There is disclosed a semiconductor device provided with a metal layer (1, 2) which presents a structured surface in the areas subjected to thermal shock loads. To this effect, there is provided under the metal layer (1) at the top surface of the semiconductor, projecting oxide portions (16) which form in the metal coating layer a predetermined structure. Thus, when because of thermal shock loads, different elongation of the semiconductor material and the metal layer (1) and shearing stresses occur, the top surface opposes any tearing or slitting.

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