公开(公告)号：WO2011133349A3

公开(公告)日：2012-04-26

申请号：PCT/US2011031893

申请日：2011-04-11

Applicant: APPLIED MATERIALS INC ,  ZHOU YIFENG ,  ZHOU QINGJUN ,  PATZ RYAN ,  PENDER JEREMIAH T ,  ARMACOST MICHAEL D

Inventor： ZHOU YIFENG ,  ZHOU QINGJUN ,  PATZ RYAN ,  PENDER JEREMIAH T ,  ARMACOST MICHAEL D

IPC: H01L21/3065 ,  H01L21/027

CPC classification number: H01L21/31116

Abstract: Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl2).

Abstract translation: 本文提供了蚀刻硅基抗反射层的方法。 在一些实施例中，蚀刻硅基抗反射层的方法可以包括向处理室提供其上具有多层抗蚀剂的衬底，所述多层抗蚀剂包括限定要被蚀刻到衬底中的特征的图案化光致抗蚀剂层 在硅基抗反射涂层之上; 以及使用由具有包含含氯气体的初级反应剂的工艺气体形成的等离子体，通过图案化的光致抗蚀剂层蚀刻硅基抗反射层。 在一些实施方案中，含氯气体是氯（Cl 2）。

公开(公告)号：WO2011133349A2

公开(公告)日：2011-10-27

申请号：PCT/US2011/031893

申请日：2011-04-11

Applicant: APPLIED MATERIALS, INC. ,  ZHOU, Yifeng ,  ZHOU, Qingjun ,  PATZ, Ryan ,  PENDER, Jeremiah T. ,  ARMACOST, Michael D.

Inventor： ZHOU, Yifeng ,  ZHOU, Qingjun ,  PATZ, Ryan ,  PENDER, Jeremiah T. ,  ARMACOST, Michael D.

IPC: H01L21/3065 ,  H01L21/027

CPC classification number: H01L21/31116

Abstract: Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl 2 ).

Abstract translation: 本文提供了蚀刻硅基抗反射层的方法。 在一些实施例中，蚀刻硅基抗反射层的方法可以包括向处理室提供其上具有多层抗蚀剂的衬底，所述多层抗蚀剂包括限定要被蚀刻到衬底中的特征的图案化光致抗蚀剂层 在硅基抗反射涂层之上; 以及使用由具有包含含氯气体的初级反应剂的工艺气体形成的等离子体，通过图案化的光致抗蚀剂层蚀刻硅基抗反射层。 在一些实施方案中，含氯气体是氯（Cl 2）。