FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN
    1.
    发明申请
    FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN 审中-公开
    快速磁性记忆装置利用旋转传递和磁性元素

    公开(公告)号:WO2006133342A2

    公开(公告)日:2006-12-14

    申请号:PCT/US2006/022233

    申请日:2006-06-07

    CPC classification number: G11C11/16

    Abstract: A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.

    Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储单元,多个字线和多个位线。 多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。 多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。 多个磁性元件中的每一个具有第一端和第二端。 所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。 多个字线与多个选择晶体管耦合,并且选择性地使能多个选择晶体管的一部分。

    FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN
    2.
    发明申请
    FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN 审中-公开
    快速磁记忆装置利用旋转传递和磁性元件

    公开(公告)号:WO2006133342A3

    公开(公告)日:2007-04-12

    申请号:PCT/US2006022233

    申请日:2006-06-07

    CPC classification number: G11C11/16

    Abstract: A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.

    Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储单元,多个字线和多个位线。 多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。 多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。 多个磁性元件中的每一个具有第一端和第二端。 所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。 多个字线与多个选择晶体管耦合,并且选择性地使能多个选择晶体管的一部分。

    A THREE-AXIS MAGNETIC SENSOR
    3.
    发明申请

    公开(公告)号:WO2019242175A1

    公开(公告)日:2019-12-26

    申请号:PCT/CN2018/111130

    申请日:2018-10-22

    Abstract: A three-axis magnetic sensor apparatus is described that is processed together into a single chip, with high performance, low cost, as well as small size. The three-axis magnetic sensor apparatus include a substrate, a two-axis magnetic sensing structure and another single-axis sensing structure. The two-axis sensing magnetic structure is consisted of two shielded Wheatstone bridge configurations in conjunction with an annular or semi annular magnetic flux-guiding structure (F1), and the single-axis sensing structure is consisted of a push-pull Wheatstone bridge in conjunction with a flux guide (F2) that can generate a fringe field in which its horizontal component is proportional to the vertical component of the external magnetic field. The two-axis magnetic sensing structure and the single-axis structure are processed together into a single chip, and can be used to measure respectively X, Y and Z components of external magnetic fields.

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