LOW-VOLTAGE, N-CHANNEL HYBRID TRANSISTORS
    2.
    发明申请
    LOW-VOLTAGE, N-CHANNEL HYBRID TRANSISTORS 审中-公开
    低电压,N沟道混合晶体管

    公开(公告)号:WO2009089283A3

    公开(公告)日:2009-12-30

    申请号:PCT/US2009030332

    申请日:2009-01-07

    IPC分类号: H01L29/10

    摘要: Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.

    摘要翻译: 混合半导体介电材料和使用混合半导体介电材料的电子或电光器件。 混合半导体介电材料包括具有提供n型半导体性质的芯部分和向混合半导体介电材料层提供介电特性的侧链的分子。 具体的杂化半导体介电材料包括具有侧链的四羧酸二酰亚胺化合物,其具有通过亚烷基或杂亚烷基连接基团与四羧酸二酰亚胺结构连接的氟取代的脂族或芳族部分。

    LOW-VOLTAGE, N-CHANNEL HYBRID TRANSISTORS
    3.
    发明申请
    LOW-VOLTAGE, N-CHANNEL HYBRID TRANSISTORS 审中-公开
    低电压,N沟道混合晶体管

    公开(公告)号:WO2009089283A2

    公开(公告)日:2009-07-16

    申请号:PCT/US2009/030332

    申请日:2009-01-07

    IPC分类号: H01L51/00

    摘要: Hybrid semiconducting-dielectric materials and electronic or electro-optic devices using the hybrid semiconducting-dielectric materials. Hybrid semiconducting-dielectric materials comprise molecules that have a core section that provides an n-type semiconducting property and side chains that provide a dielectric property to a layer of hybrid semiconducting-dielectric material. Specific hybrid semiconducting-dielectric materials include tetracarboxylic diimide compounds having sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the tetracarboxylic diimide structure by an alkylene or heteroalkylene linking group.

    摘要翻译: 使用混合半导体 - 介电材料的混合半导体 - 介电材料和电子或电光器件。 混合型半导体 - 介电材料包括具有提供n型半导体性质的核心部分和为混合半导体 - 介电材料层提供介电性质的侧链的分子。 具体的混合半导体 - 介电材料包括具有侧链的四羧酸二酰亚胺化合物,所述侧链包含通过亚烷基或杂亚烷基连接基团与四羧酸二酰亚胺结构连接的氟取代的脂族或芳族部分。