公开(公告)号：WO2009009564A1

公开(公告)日：2009-01-15

申请号：PCT/US2008/069475

申请日：2008-07-09

Applicant: SUN MICROSYSTEMS, INC. ,  SUN MICROSYSTEMS TECHNOLOGY LTD. ,  BHATIA, Ajay

Inventor： BHATIA, Ajay

IPC: G11C11/419

CPC classification number: G11C11/417 ,  G11C11/412 ,  G11C11/419

Abstract: Static random access memory (SRAM) cells and methods of operation are provided which may be used to provide improved writeability and stability to support low voltage operation of memory devices. For example, in one implementation, by temporarily interrupting the connection between portions of an SRAM cell (125,145) and a power source (105) such as a reference voltage or current source, the writeability of SRAM cells can be improved. Additional read port implementations are also provided to facilitate low voltage operation. In another implementation, a power switch circuit (101) responsive to a word line (190) and logic signals (102,103) may be used to provide such interruptions.

Abstract translation: 提供了静态随机存取存储器（SRAM）单元和操作方法，其可用于提供改进的可写性和稳定性以支持存储器件的低电压操作。 例如，在一个实现中，通过暂时中断SRAM单元（125,145）的部分与诸如参考电压或电流源的电源（105）之间的连接，可以提高SRAM单元的可写性。 还提供附加的读端口实现以便于低电压操作。 在另一实现中，可以使用响应于字线（190）的电源开关电路（101）和逻辑信号（102,103）来提供这种中断。