公开(公告)号：WO2021228359A1

公开(公告)日：2021-11-18

申请号：PCT/EP2020/063055

申请日：2020-05-11

Applicant: APPLIED MATERIALS, INC. ,  TSAI, Yun-Chu ,  YIM, Dong Kil ,  LIM, Rodney Shunleong ,  GRILLMAYER, Jürgen ,  KIM, Jung Bae ,  BENDER, Marcus

Inventor： TSAI, Yun-Chu ,  YIM, Dong Kil ,  LIM, Rodney Shunleong ,  GRILLMAYER, Jürgen ,  KIM, Jung Bae ,  BENDER, Marcus

IPC: C23C14/56 ,  C23C14/34 ,  C23C14/08 ,  H01J37/34 ,  H01L29/00

Abstract: A method (480, 580) of depositing layers of a thin-film transistor on a substrate using a sputter deposition source comprising at least one first pair of electrodes and at least one second pair of electrodes, the method comprising moving (482, 582) the substrate to a first vacuum chamber; depositing (484, 584) a first layer of the layers on the substrate by supplying the at least one first pair of electrodes with bipolar pulsed DC voltage, wherein a first material of the first layer comprises a first metal oxide; moving (486, 586) the substrate from the first vacuum chamber to a second vacuum chamber without a vacuum break; and depositing (488, 588) a second layer of the layers on the first layer by supplying the at least one second pair of electrodes with bipolar pulsed DC voltage, wherein a second material of the second layer comprises a second metal oxide, the second material being different from the first material.