公开(公告)号：WO2011139435A3

公开(公告)日：2012-01-26

申请号：PCT/US2011030582

申请日：2011-03-30

Applicant: APPLIED MATERIALS INC ,  THADANI KIRAN V ,  TANG JING ,  INGLE NITIN ,  YANG DONGQING

Inventor： THADANI KIRAN V ,  TANG JING ,  INGLE NITIN ,  YANG DONGQING

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.

Abstract translation: 描述了干法蚀刻含硅介电膜的方法。 这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。 部分或完全避免固体残余物的积累增加了蚀刻速率。

公开(公告)号：WO2012106033A3

公开(公告)日：2012-11-29

申请号：PCT/US2011064724

申请日：2011-12-13

Applicant: APPLIED MATERIALS INC ,  YANG DONGQING ,  TANG JING ,  INGLE NITIN

Inventor： YANG DONGQING ,  TANG JING ,  INGLE NITIN

IPC: H01L21/3065

CPC classification number: H01L21/31116

Abstract: A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

Abstract translation: 描述了从多个沟槽蚀刻氧化硅的方法，其允许在沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更光滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一道干法刻蚀阶段迅速除去氧化硅，并产生大量的固体残渣颗粒。 第二干蚀刻阶段慢慢地除去氧化硅并且在大的固体残余颗粒中产生小的固体残余颗粒。 在随后的升华步骤中，小的和大的固体残余物都被除去。 两个干法蚀刻阶段之间没有升华步骤。

公开(公告)号：WO2012106033A2

公开(公告)日：2012-08-09

申请号：PCT/US2011/064724

申请日：2011-12-13

Applicant: APPLIED MATERIALS, INC. ,  YANG, Dongqing ,  TANG, Jing ,  INGLE, Nitin

Inventor： YANG, Dongqing ,  TANG, Jing ,  INGLE, Nitin

CPC classification number: H01L21/31116

Abstract: A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

Abstract translation: 描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。 该方法包括两个干蚀刻阶段，接着是升华步骤。 第一次干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。 第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。 在随后的升华步骤中，小和大的固体残余物都被去除。 两个干蚀刻阶段之间没有升华步骤。

公开(公告)号：WO2011115761A3

公开(公告)日：2011-12-22

申请号：PCT/US2011027221

申请日：2011-03-04

Applicant: APPLIED MATERIALS INC ,  TANG JING ,  INGLE NITIN ,  YANG DONGQING ,  VENKATARAMAN SHANKAR

Inventor： TANG JING ,  INGLE NITIN ,  YANG DONGQING ,  VENKATARAMAN SHANKAR

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091

Abstract: A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.

Abstract translation: 描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。 该方法包括两个干蚀刻循环。 第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。 剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。

公开(公告)号：WO2011139435A2

公开(公告)日：2011-11-10

申请号：PCT/US2011/030582

申请日：2011-03-30

Applicant: APPLIED MATERIALS, INC. ,  THADANI, Kiran V. ,  TANG, Jing ,  INGLE, Nitin ,  YANG, Dongqing

Inventor： THADANI, Kiran V. ,  TANG, Jing ,  INGLE, Nitin ,  YANG, Dongqing

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.

Abstract translation: 描述了干法蚀刻含硅介电膜的方法。 这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。 部分或完全避免固体残余物的积累增加了蚀刻速率。

公开(公告)号：WO2011115761A2

公开(公告)日：2011-09-22

申请号：PCT/US2011/027221

申请日：2011-03-04

Applicant: APPLIED MATERIALS, INC. ,  TANG, Jing ,  INGLE, Nitin ,  YANG, Dongqing ,  VENKATARAMAN, Shankar

Inventor： TANG, Jing ,  INGLE, Nitin ,  YANG, Dongqing ,  VENKATARAMAN, Shankar

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091

Abstract: A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.

Abstract translation: 描述了从窄沟槽和宽沟槽（或开口区域）蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻更进一步。 该方法包括两个干法蚀刻循环。 第一次干蚀刻循环涉及低强度或缩短的升华步骤，在狭窄的沟槽中留下固体残余物。 剩余的固体残余物在第二干法蚀刻循环期间抑制了窄沟槽中的蚀刻进程，从而允许宽沟槽中的蚀刻超过了窄沟槽中的蚀刻。

公开(公告)号：WO2011087580A1

公开(公告)日：2011-07-21

申请号：PCT/US2010/057676

申请日：2010-11-22

Applicant: APPLIED MATERIALS, INC. ,  TANG, Jing ,  INGLE, Nitin ,  YANG, Dongqing

Inventor： TANG, Jing ,  INGLE, Nitin ,  YANG, Dongqing

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J2237/3341

Abstract: A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

Abstract translation: 描述了蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有更大或更小的氢流量比的SiConiTM蚀刻。 已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率的差异。 降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，维持相对高的衬底温度并以多个步骤执行SiConiTM。 单独或组合的这些方法中的每一种用于通过限制固体残余物颗粒尺寸来减少蚀刻表面的粗糙度。