公开(公告)号：WO2022205462A1

公开(公告)日：2022-10-06

申请号：PCT/CN2021/085425

申请日：2021-04-02

Applicant: APPLIED MATERIALS, INC. ,  ZHAO, Sha

Inventor： CHUDZIK, Michael ,  SOMESHWAR, Ria ,  DEYO, Daniel ,  ZHAO, Sha ,  KHOURY, Michel

IPC: H01L33/32 ,  H01L33/00

Abstract: Exemplary processing methods include forming a nucleation layer on a substrate. The nucleation layer may be formed by physical vapor deposition (PVD), and the physical vapor deposition may be characterized by a deposition temperature of greater than or about 700℃. The methods may further include forming a patterned mask layer on the nucleation layer. The patterned mask layer may include openings that expose portions of the nucleation layer. Gallium-and-nitrogen-containing regions may be formed on the exposed portions of the nucleation layer. In additional embodiments, the nucleation layer may include a first and second portions separated by an interlayer that stops the propagation of at least some dislocations in the nucleation layer.