THERMAL INSULATING STRUCTURE
    1.
    发明申请
    THERMAL INSULATING STRUCTURE 审中-公开
    热绝缘结构

    公开(公告)号:WO2018065758A1

    公开(公告)日:2018-04-12

    申请号:PCT/GB2017/052936

    申请日:2017-09-29

    Abstract: A structure for a substrate, which includes a layer of fire resistant material, the material including first and second parts mixable together so that the material will cure by an addition reaction in the presence of a metallic catalyst. The first part includes a polydiorganosiloxane polymer having at least two unsaturated groups per molecule. The first part also includes the metallic catalyst, a reinforcing filler, and between 10 and 40%wt. of a vitrifying agent. The second part includes an organohydrogensiloxane crosslinker described by formula R 1 3 Si(OSiR 2 2 ) x (OSiMeH) y OSiR 1 3 , where each R 2 is independently selected from saturated hydrocarbon radicals including from 1 to 10 carbon atoms or aromatic hydrocarbon radicals. Each R 1 is independently selected from hydrogen or R 2 , x is zero or an integer and y is an integer. The organohydrogensiloxane has at least three Si-H bonds per molecule.

    Abstract translation: 一种用于基底的结构,其包括一层耐火材料,所述材料包括可混合在一起的第一和第二部分,使得所述材料通过在金属催化剂存在下的加成反应而固化。 第一部分包括每分子具有至少两个不饱和基团的聚二有机硅氧烷聚合物。 第一部分还包括金属催化剂,增强填料,以及10-40重量%。 的玻璃化剂。 第二部分包括由式R 1 3 Si(OSiR 2 2)2 Si 2 O 3所描述的有机氢硅氧烷交联剂, (OSiMeH)y OSiR 1 3,其中每个R 2独立地选自饱和的 包括1至10个碳原子的烃基或芳族烃基。 每个R 1独立地选自氢或R 2,x是零或整数,并且y是整数。 有机氢硅氧烷每个分子至少有三个Si-H键。

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