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公开(公告)号:WO2022161795A1
公开(公告)日:2022-08-04
申请号:PCT/EP2022/050819
申请日:2022-01-16
Applicant: ASML HOLDING N.V.
Inventor: WIENER, Roberto B. , MANKALA, Kalyan, Kumar , DOWNEY, Todd R.
IPC: G03F7/20
Abstract: Systems, apparatuses, and methods are provided for adjusting illumination slit uniformity in a lithographic apparatus. An example method can include irradiating, by a radiation source, a portion of a finger assembly with radiation. The example method can further include receiving, by a radiation detector, at least a portion of the radiation in response to the irradiating of the portion of the finger assembly. The example method can further include determining, by a processor, a change in a shape of the finger assembly based on the received radiation. The example method can further include generating, by the processor, a control signal configured to modify a position of the finger assembly based on the determined change in the shape of the finger assembly. Subsequently, the example method can include transmitting, by the processor, the control signal to a motion control system coupled to the finger assembly.
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公开(公告)号:WO2021144159A1
公开(公告)日:2021-07-22
申请号:PCT/EP2021/050024
申请日:2021-01-04
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: DER KINDEREN, Ronny , GANG, Tian , DOWNEY, Todd R.
IPC: G03F7/20 , G03F7/70133 , G03F7/70558
Abstract: Described herein is a system, method, a lithographic apparatus and a software product configured to determine a drift in an attribute of an illumination and corresponding drift corrections. The system includes a lithographic apparatus that includes at least two sensors, each configured to measure a property related to an illumination region provided for imaging a substrate. Furthermore, a processor is configured to: determine, based on a ratio of the measured property, a drift of the illumination region with respect to a reference position; determine, based on the drift of the illumination region, a drift in an attribute related to the illumination upstream of the illumination region measured by the at least two sensors, and determine, based the drift in the attribute, the drift correction to be applied to the attribute to compensate for the drift in the attribute.
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公开(公告)号:WO2021099408A1
公开(公告)日:2021-05-27
申请号:PCT/EP2020/082570
申请日:2020-11-18
Applicant: ASML HOLDING N.V. , ASML NETHERLANDS B.V.
Inventor: NATH, Janardan , MASON, Christopher, John , HSU, Duan-Fu, Stephen , DOWNEY, Todd R. , GANG, Tian
Abstract: A method for source mask optimization or mask only optimization used to image a pattern onto a substrate is described. The method comprises determining a non-uniform illumination intensity profile for illumination from an illumination source; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto the substrate substantially match a target design. The non- uniform illumination intensity profile may be determined based on an illumination source and the projection optics of a lithographic apparatus. In some embodiments, the projection optics comprise a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may comprise performing optical proximity correction, for example.
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