公开(公告)号：WO2020182386A1

公开(公告)日：2020-09-17

申请号：PCT/EP2020/053292

申请日：2020-02-10

Applicant: ASML NETHERLANDS B.V.

Inventor： AKHSSAY, Mhamed ,  VAN BOKHOVEN, Laurentius, Johannes, Adrianus

IPC: G03F7/20

Abstract: A method of predicting thermally induced aberrations of a projection system for projecting a radiation beam, the method comprising: calculating a change in temperature of the projection system from a power of the radiation beam output from the projection system using a dynamic linear function; and calculating the thermally induced aberrations from the calculated change in temperature using a static non-linear function.

公开(公告)号：WO2021160351A1

公开(公告)日：2021-08-19

申请号：PCT/EP2021/050361

申请日：2021-01-11

Applicant: ASML NETHERLANDS B.V.

Inventor： AKHSSAY, Mhamed ,  FRISCO, Pierluigi

IPC: G03F7/20

Abstract: A method of tuning a lithographic process for a particular patterning device. The method comprises: obtaining wavefront data (420) relating to an objective lens (PS) of a lithographic apparatus (LA), measured subsequent to an exposure of a pattern on a substrate (W) using said particular patterning device (MA); determining a pattern specific wavefront contribution from the wavefront data (445) and a wavefront reference (430), the pattern specific wavefront contribution relating to said patterning device; and tuning (460) said lithographic process for said particular patterning device using said pattern specific wavefront contribution.

公开(公告)号：WO2019166163A1

公开(公告)日：2019-09-06

申请号：PCT/EP2019/051946

申请日：2019-01-28

Applicant: ASML NETHERLANDS B.V.

Inventor： SCHAAFSMA, Martijn, Cornelis ,  AKHSSAY, Mhamed ,  DOWNES, James, Robert

IPC: G03F7/20

Abstract: A method of calibrating a projection system heating model to predict an aberration in a projection system in a lithographic apparatus, the method comprising passing exposure radiation through a projection system to expose one or more exposure fields on a substrate provided on a substrate table, making measurements of the aberration in the projection system caused by the exposure radiation, wherein the time period between measurements is less than the time period that would be taken to expose all exposure fields on the substrate.