公开(公告)号：WO2022214267A1

公开(公告)日：2022-10-13

申请号：PCT/EP2022/056091

申请日：2022-03-09

Applicant: ASML NETHERLANDS B.V.

Inventor： KARA, Dogacan ,  JENSEN, Erik ,  WILDENBERG, Jochem, Sebastiaan ,  DECKERS, David, Frans, Simon ,  GULER, Sila ,  ASTUDILLO RENGIFO, Reinaldo, Antonio ,  YUDHISTIRA, Yasri ,  HILHORST, Gijs ,  CAICEDO FERNANDEZ, David, Ricardo ,  SPIERING, Frans, Reinier ,  KHO, Sinatra, Canggih ,  BLOM, Herman, Martin ,  KIM, Sang Uk ,  KIM, Hyun-Su

IPC: G03F7/20 ,  G03F9/00

Abstract: A method for determining a substrate model for describing a first measurement dataset and a second measurement dataset relating to a performance parameter. The method comprises obtaining candidate basis functions for a plurality of substrate models. Steps 1 to 4 are performed iteratively for said first measurement dataset and said second measurement dataset until at least one stopping criterion is met so as to determine said substrate model, said steps comprising: 1. selecting a candidate basis function from said candidate basis functions; 2. updating a substrate model by adding the candidate basis function into this substrate model to obtain an updated substrate model; 3. evaluating the updated substrate model based on at least one of said first measurement dataset and said second measurement dataset; and 4. determining whether to include the basis function within the substrate model based on 10 the evaluation.

公开(公告)号：WO2019001873A1

公开(公告)日：2019-01-03

申请号：PCT/EP2018/063959

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  YUDHISTIRA, Yasri ,  LUIJTEN, Carlo, Cornelis, Maria ,  VERSTRAETEN, Bert ,  GEMMINK, Jan-Willem

IPC: G03F7/20

Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424). A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.

公开(公告)号：WO2019011604A1

公开(公告)日：2019-01-17

申请号：PCT/EP2018/066394

申请日：2018-06-20

Applicant: ASML NETHERLANDS B.V.

Inventor： CHEONG, Lin, Lee ,  LA FONTAINE, Bruno ,  KEA, Marc, Jurian ,  YUDHISTIRA, Yasri ,  GENIN, Maxime, Philippe, Frederic

IPC: G03F7/20

Abstract: A method including obtaining verified values of a characteristic of a plurality of patterns on a substrate produced by a device manufacturing process; obtaining computed values of the characteristic using a non-probabilistic model; obtaining values of a residue of the non-probabilistic model based on the verified values and the computed values; and obtaining an attribute of a distribution of the residue based on the values of the residue. Also disclosed herein are methods of computing a probability of defects on a substrate produced by the device manufacturing process, and of obtaining an attribute of a distribution of the residue of a non-probabilistic model.