TWO BIT/CELL SRAM PUF WITH ENHANCED RELIABILITY

    公开(公告)号:WO2020003144A2

    公开(公告)日:2020-01-02

    申请号:PCT/IB2019/055377

    申请日:2019-06-26

    Abstract: A method for detecting unreliable bits in transistor circuitry includes adjusting a value of a variable capacitor coupled to a physical unclonable function (PUF) cell of a transistor circuit. The adjusting includes tilting the PUF cell to either a zero or one state: if the PUF cell changes its state during the tilting it is deemed unstable, and if the PUF cell does not change its state during the tilting it is deemed stable.

    DETECTION OF UNRELIABLE PUF CELLS
    2.
    发明申请

    公开(公告)号:WO2020003144A3

    公开(公告)日:2020-01-02

    申请号:PCT/IB2019/055377

    申请日:2019-06-26

    Abstract: A method for detecting unreliable bits in transistor circuitry includes adjusting a value of a variable capacitor coupled to a physical unclonable function (PUF) cell of a transistor circuit. The adjusting includes tilting the PUF cell to either a zero or one state: if the PUF cell changes its state during the tilting it is deemed unstable, and if the PUF cell does not change its state during the tilting it is deemed stable.

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