公开(公告)号：WO2003098667A1

公开(公告)日：2003-11-27

申请号：PCT/US2003/013648

申请日：2003-04-30

Applicant: CREE INC.

Inventor： NAKAMURA, Shuji ,  DENBAARS, Steven ,  BATRES, Max ,  COULTER, Micheal

IPC: H01L21/00

CPC classification number: H01L21/67103 ,  H01L21/68771

Abstract: A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

Abstract translation: 公开了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的基座。 感受体包括由在高温下具有低导热性的材料制成的基座结构，并且具有一个或多个用于容纳传热塞的板孔。 插头由高温下具有高导热性的材料制成，以将热量传递到半导体晶片。 还公开了一种使用根据本发明的基座的金属有机化学气相沉积反应器。