公开(公告)号：WO2019204748A1

公开(公告)日：2019-10-24

申请号：PCT/US2019/028350

申请日：2019-04-19

Applicant: GLO AB

Inventor： BATRES, Max ,  CICH, Michael J. ,  CHEN, Zhen ,  DANESH, Fariba

IPC: H01L33/00 ,  H01L33/26 ,  H01L33/60 ,  H01L27/15

Abstract: A light emitting diode (LED) includes a n-doped semiconductor material layer located over a substrate, an active region including an optically active compound semiconductor layer stack configured to emit light located over the n-doped semiconductor material layer, a p-doped semiconductor material layer located over the active region and containing a nickel doped surface region, a conductive layer contacting the nickel doped surface region of the p-doped semiconductor material, and a device-side bonding pad layer electrically connected to the conductive layer.

公开(公告)号：WO2020117454A1

公开(公告)日：2020-06-11

申请号：PCT/US2019/061833

申请日：2019-11-15

Applicant: GLO AB

Inventor： BATRES, Max ,  CICH, Michael J. ,  CHEN, Zhen ,  DANESH, Fariba

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/60 ,  H01L33/36

Abstract: A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30 % of the electrically active region.