公开(公告)号：WO2022103391A1

公开(公告)日：2022-05-19

申请号：PCT/US2020/060097

申请日：2020-11-12

Applicant: GLOBALWAFERS CO., LTD.

Inventor： BHAGAVAT, Sumeet S. ,  DAGGOLU, Parthiv ,  MEYER, Benjamin Michael ,  RYU, JaeWoo

IPC: C30B15/14 ,  C30B29/06

Abstract: Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot in such ingot puller apparatus are disclosed. In some embodiments, the side heater is relatively short. The side heater may be fully above a floor of the crucible when the crucible is in its lowest position in the ingot puller.

公开(公告)号：WO2022232310A1

公开(公告)日：2022-11-03

申请号：PCT/US2022/026590

申请日：2022-04-27

Applicant: GLOBALWAFERS CO., LTD.

Inventor： RYU, JaeWoo ,  DAGGOLU, Parthiv ,  BASAK, Soubir ,  ZHANG, Nan

IPC: C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

Abstract: Method for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. A plurality of process parameters are regulated during ingot growth including a wall temperature of the crucible, a transport of silicon monoxide (SiO) from the crucible to the single crystal, and an evaporation rate of SiO from the melt. Regulating the plurality of process parameters may include controlling the position of a maximum gauss plane of the horizontal magnetic field, controlling the strength of the horizontal magnetic field, and controlling the crucible rotation rate.