公开(公告)号：WO2022146711A1

公开(公告)日：2022-07-07

申请号：PCT/US2021/063866

申请日：2021-12-16

Applicant: GLOBALWAFERS CO., LTD.

Inventor： ALBRECHT, Peter Daniel ,  WU, Junnan

IPC: H01J37/20 ,  C23C14/48 ,  G01N19/02 ,  H01J37/317

Abstract: Systems for implanting semiconductor structures with ions are disclosed. The semiconductor structure is positioned on a heatsink 100 and ions are implanted through a front surface of the semiconductor structure to form a damage region in the semiconductor structure. A parameter related to the coefficient of friction of the heatsink 100 is measured; e.g. a slide angle is measured by a testing apparatus 300. The parameter is compared to a baseline range.