公开(公告)号：WO2007075889A3

公开(公告)日：2007-07-05

申请号：PCT/US2006/048793

申请日：2006-12-21

Applicant: GRANDIS INC. ,  HUAI, Yiming ,  DIAO, Zhitao ,  PANCHULA, Alex ,  CHEN, Eugene Youjun ,  WANG, Lien-Chang

Inventor： HUAI, Yiming ,  DIAO, Zhitao ,  PANCHULA, Alex ,  CHEN, Eugene Youjun ,  WANG, Lien-Chang

IPC: G11C11/22

Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.

公开(公告)号：WO2007143393A3

公开(公告)日：2007-12-13

申请号：PCT/US2007/069558

申请日：2007-05-23

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  LUO, Xiao ,  CHEN, Eugene, Youjun ,  WANG, Lien-Chang ,  HUAI, Yiming

Inventor： LUO, Xiao ,  CHEN, Eugene, Youjun ,  WANG, Lien-Chang ,  HUAI, Yiming

IPC: G11C11/00

Abstract: A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

公开(公告)号：WO2008002813A2

公开(公告)日：2008-01-03

申请号：PCT/US2007/071710

申请日：2007-06-20

Applicant: GRANDIS, INC. ,  RENESAS TECHNOLOGY CORP. ,  CHEN, Eugene, Youjun ,  HUAI, Yiming ,  PANCHULA, Alex, Fischer ,  WANG, Lien-Chang ,  LUO, Xiao

Inventor： CHEN, Eugene, Youjun ,  HUAI, Yiming ,  PANCHULA, Alex, Fischer ,  WANG, Lien-Chang ,  LUO, Xiao

IPC: G11C11/15

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 磁存储器包括阵列中的磁存储单元，位线和源极线。 每个磁存储单元包括至少一个磁性元件。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 每个磁性元件具有自由和固定的层和主要间隔物。 如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物 如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s） 比最大高电阻状态读取电流除以最小高电阻状态写入电流。

公开(公告)号：WO2009061327A1

公开(公告)日：2009-05-14

申请号：PCT/US2007/084361

申请日：2007-11-09

Applicant: GRANDIS, INC. ,  WANG, Lien-Chang ,  HUAI, Yiming

Inventor： WANG, Lien-Chang ,  HUAI, Yiming

IPC: H01L29/00

CPC classification number: H01L43/12 ,  H01L21/76802 ,  H01L21/76829

Abstract: A method and system for fabricating a magnetic storage element are disclosed. The method and system include providing a magnetic storage stack including the magnetic storage element. In one aspect, the method and system include providing an etch stop layer covering the magnetic storage stack and providing an insulator on the etch stop layer. The magnetic storage stack includes a magnetic storage element and hard mask(s) that may be less than one hundred nanometers thick. The method and system also include removing a portion of the insulator above the magnetic storage stack, exposing a portion of the etch stop layer. The insulator is removed at a higher rate than the etch stop layer. The method and system also include removing the exposed portion of the etch stop layer, exposing a portion of the magnetic storage stack, and providing a conductor contacting the exposed portion of the magnetic storage stack.

Abstract translation: 公开了一种用于制造磁存储元件的方法和系统。 该方法和系统包括提供包括磁存储元件的磁存储堆叠。 在一个方面，该方法和系统包括提供覆盖该磁存储堆叠并在该蚀刻停止层上提供绝缘体的蚀刻停止层。 磁存储堆叠包括可能小于一百纳米厚的磁存储元件和硬掩模。 该方法和系统还包括去除磁存储堆叠上方的绝缘体的一部分，暴露一部分蚀刻停止层。 以比蚀刻停止层更高的速率除去绝缘体。 该方法和系统还包括去除蚀刻停止层的暴露部分，暴露磁存储堆叠的一部分，以及提供接触磁存储堆叠的暴露部分的导体。

公开(公告)号：WO2007117392A2

公开(公告)日：2007-10-18

申请号：PCT/US2007/008203

申请日：2007-03-29

Applicant: GRANDIS INC. ,  RENESAS TECHNOLOGY CORP. ,  WANG, Lien-Chang ,  CHEN, Eugene Youjun ,  HUAI, Yiming ,  DIAO, Zhitao

Inventor： WANG, Lien-Chang ,  CHEN, Eugene Youjun ,  HUAI, Yiming ,  DIAO, Zhitao

IPC: H01L43/00

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/12

Abstract: Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.

Abstract translation: 与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。 描述了插头MTJ设计和制造技术。

公开(公告)号：WO2007062100A2

公开(公告)日：2007-05-31

申请号：PCT/US2006/045168

申请日：2006-11-22

Applicant: GRANDIS, INC. ,  WANG, Lien-Chang ,  DIAO, Zhitao ,  DING, Yunfei

Inventor： WANG, Lien-Chang ,  DIAO, Zhitao ,  DING, Yunfei

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A method and system for providing a magnetic memory is described. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

Abstract translation: 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。 所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。 磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。 选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

公开(公告)号：WO2008118942A1

公开(公告)日：2008-10-02

申请号：PCT/US2008/058231

申请日：2008-03-26

Applicant: GRANDIS INC. ,  RENESAS TECHNOLOGY CORP.

Inventor： DIAO, Zhitao ,  WANG, Lien-Chang ,  HUAI, Yiming

IPC: G11C11/15

CPC classification number: G11C11/16 ,  Y10T29/49002

Abstract: A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.

Abstract translation: 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。 多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。 多个位线对应于多个磁存储单元。 所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。 所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。