HIGH DENSITY THREE-DIMENSIONAL RF/MICROWAVE SWITCH ARCHITECTURE
    1.
    发明申请
    HIGH DENSITY THREE-DIMENSIONAL RF/MICROWAVE SWITCH ARCHITECTURE 审中-公开
    高密度三维射频/微波开关结构

    公开(公告)号:WO2007061605A3

    公开(公告)日:2007-09-27

    申请号:PCT/US2006042956

    申请日:2006-11-02

    Applicant: HARRIS CORP

    CPC classification number: H01P1/127

    Abstract: RF switching system (100, 200) formed from a structure (102, 202) comprised of dielectric material. The structure can have two or more faces (104, 204) , with at least one face located in a plane exclusive of at least a second one of the faces. For example, the structure can define a geometric shape that is a polyhedron. RF switches (106, 206) can be disposed on two or more of the faces. Conductive RF feed stubs (110, 210) are provided for each RF switch extending from an interconnection point (114, 214) to electrical contact terminals (116, 216) that are respectively connected to the RF switches. The interconnection point is located within the structure at a location generally medial to the two or more of terminals.

    Abstract translation: RF开关系统(100,200)由由介电材料构成的结构(102,202)形成。 该结构可具有两个或更多个面(104,204),其中至少一个面位于除面中的至少第二面之外的平面中。 例如,该结构可以定义为多面体的几何形状。 RF开关(106,206)可以布置在两个或更多个面上。 为从互连点(114,214)延伸到分别连接到RF开关的电接触端子(116,216)的每个RF开关提供导电RF馈电短截线(110,210)。 互连点位于结构内通常位于两个或更多个端子的内侧的位置处。

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